X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.
|Number of pages||6|
|Journal||Journal of Electron Spectroscopy and Related Phenomena|
|Publication status||Published - 1 Mar 2001|
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Atomic and Molecular Physics, and Optics
- Surfaces and Interfaces