XPS investigation of the equilibrium segregation of antimony at germanium surface

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.

Original languageEnglish
Pages (from-to)415-420
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume114-116
DOIs
Publication statusPublished - 1 Mar 2001
Externally publishedYes

Fingerprint

Germanium
Antimony
antimony
germanium
X ray photoelectron spectroscopy
photoelectron spectroscopy
Heat treatment
heat treatment
x rays
Core levels
Argon
Surface states
Binding energy
Etching
shift
Doping (additives)
Vacuum
Ions
diffusion coefficient
binding energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

XPS investigation of the equilibrium segregation of antimony at germanium surface. / Tabet, Nouar.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 114-116, 01.03.2001, p. 415-420.

Research output: Contribution to journalArticle

@article{e6d12bf825aa4fdfbbd920ccf5b326c9,
title = "XPS investigation of the equilibrium segregation of antimony at germanium surface",
abstract = "X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.",
author = "Nouar Tabet",
year = "2001",
month = "3",
day = "1",
doi = "10.1016/S0368-2048(00)00385-6",
language = "English",
volume = "114-116",
pages = "415--420",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
issn = "0368-2048",
publisher = "Elsevier",

}

TY - JOUR

T1 - XPS investigation of the equilibrium segregation of antimony at germanium surface

AU - Tabet, Nouar

PY - 2001/3/1

Y1 - 2001/3/1

N2 - X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.

AB - X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T = 600 °C. Etching Ge surface with Argon ions prior to the heat treatment enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7×10-10 cm2/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states.

UR - http://www.scopus.com/inward/record.url?scp=0035277867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035277867&partnerID=8YFLogxK

U2 - 10.1016/S0368-2048(00)00385-6

DO - 10.1016/S0368-2048(00)00385-6

M3 - Article

AN - SCOPUS:0035277867

VL - 114-116

SP - 415

EP - 420

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048

ER -