X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

M. Faiz, Nouar Tabet, A. Mekki, B. S. Mun, Z. Hussain

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d-O 2p and Zn 4d-O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band.

Original languageEnglish
Pages (from-to)1377-1379
Number of pages3
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 5 Dec 2006
Externally publishedYes

Fingerprint

X ray absorption near edge structure spectroscopy
Crystal atomic structure
Vanadium
X ray absorption
vanadium
Electronic structure
Doping (additives)
Plasmas
Thin films
Atoms
Oxidation
Electrons
thin films
atomic structure
x rays
electronic structure
oxidation
spectroscopy
atoms
electrons

Keywords

  • DC-sputtering
  • Thin films
  • Vanadium doping
  • XANES
  • ZnO

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films. / Faiz, M.; Tabet, Nouar; Mekki, A.; Mun, B. S.; Hussain, Z.

In: Thin Solid Films, Vol. 515, No. 4, 05.12.2006, p. 1377-1379.

Research output: Contribution to journalArticle

Faiz, M. ; Tabet, Nouar ; Mekki, A. ; Mun, B. S. ; Hussain, Z. / X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films. In: Thin Solid Films. 2006 ; Vol. 515, No. 4. pp. 1377-1379.
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