X-ray absorption and reflection as probes of the GaN conduction bands: theory and experiment of the N-K-edge and Ga M2,3 edges

W. R.L. Lambrecht, S. N. Rashkeev, B. Segall, K. Lawniczak-Jablonska, T. Suski, E. M. Gullikson, J. H. Underwood, R. C.C. Perera, J. C. Rife

Research output: Contribution to journalConference article

Abstract

X-ray absorption and glancing angle reflectivity measurements in the energy range of the Nitrogen K-edge and Gallium M2,3 edges are reported. Linear muffin-tin orbital band-structure and spectral function calculations are used to interpret the data. Polarization effects are evidenced for the N-K-edge spectra by comparing X-ray reflectivity in s- and p-polarized light.

Original languageEnglish
Pages (from-to)881-886
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
Publication statusPublished - 1 Jan 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 2 Dec 19966 Dec 1996

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lambrecht, W. R. L., Rashkeev, S. N., Segall, B., Lawniczak-Jablonska, K., Suski, T., Gullikson, E. M., Underwood, J. H., Perera, R. C. C., & Rife, J. C. (1997). X-ray absorption and reflection as probes of the GaN conduction bands: theory and experiment of the N-K-edge and Ga M2,3 edges. Materials Research Society Symposium - Proceedings, 449, 881-886.