Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

Kelly M. Rickey, Qiong Nian, Genqiang Zhang, Liangliang Chen, Sergey Suslov, S. Venkataprasad Bhat, Yue Wu, Gary J. Cheng, Xiulin Ruan

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ∼10,000, resulting in values on the order of ∼10 5 ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

Original languageEnglish
Article number16052
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 3 Nov 2015

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peening
welding
nanowires
sintering
heating
lasers
laser heating
electrical resistivity
pulsed lasers
electromagnetic coupling
fuses
augmentation
thin films
nanocrystals
modules
heat transfer
charge transfer
laser beams
porosity
microstructure

ASJC Scopus subject areas

  • General

Cite this

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating. / Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin.

In: Scientific Reports, Vol. 5, 16052, 03.11.2015.

Research output: Contribution to journalArticle

Rickey, KM, Nian, Q, Zhang, G, Chen, L, Suslov, S, Bhat, SV, Wu, Y, Cheng, GJ & Ruan, X 2015, 'Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating', Scientific Reports, vol. 5, 16052. https://doi.org/10.1038/srep16052
Rickey, Kelly M. ; Nian, Qiong ; Zhang, Genqiang ; Chen, Liangliang ; Suslov, Sergey ; Bhat, S. Venkataprasad ; Wu, Yue ; Cheng, Gary J. ; Ruan, Xiulin. / Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating. In: Scientific Reports. 2015 ; Vol. 5.
@article{18ea3e8693e44ef1a8a479914d013df3,
title = "Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating",
abstract = "We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ∼10,000, resulting in values on the order of ∼10 5 ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.",
author = "Rickey, {Kelly M.} and Qiong Nian and Genqiang Zhang and Liangliang Chen and Sergey Suslov and Bhat, {S. Venkataprasad} and Yue Wu and Cheng, {Gary J.} and Xiulin Ruan",
year = "2015",
month = "11",
day = "3",
doi = "10.1038/srep16052",
language = "English",
volume = "5",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

AU - Rickey, Kelly M.

AU - Nian, Qiong

AU - Zhang, Genqiang

AU - Chen, Liangliang

AU - Suslov, Sergey

AU - Bhat, S. Venkataprasad

AU - Wu, Yue

AU - Cheng, Gary J.

AU - Ruan, Xiulin

PY - 2015/11/3

Y1 - 2015/11/3

N2 - We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ∼10,000, resulting in values on the order of ∼10 5 ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

AB - We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ∼10,000, resulting in values on the order of ∼10 5 ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

UR - http://www.scopus.com/inward/record.url?scp=84946593371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946593371&partnerID=8YFLogxK

U2 - 10.1038/srep16052

DO - 10.1038/srep16052

M3 - Article

AN - SCOPUS:84946593371

VL - 5

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 16052

ER -