Variations on Nickel Complexes of the vic-Dioximes: An Understanding of Factors Affecting Volatility toward Improved Precursors for Metal-Organic Chemical Vapor Deposition of Nickel

James D. Martin, Philip Hogan, Khalil A. Abboud, Klaus Hermann Dahmen

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28 Citations (Scopus)


The vic-dioxime complexes bis(2,3-butanedionedioximato)nickel(II), Ni(dmg)2; bis(3,4-hexanedionedioximato)nickel(II), Ni(deg)2; bis(4,5-octanedionedioximato)nickel(II), Ni(dpg)2; bis(ethanedialdioximato)nicke(II), Ni(g)2; bis(1,2-diphenylethanedionedioximato)nickel(II), Ni(dbg)2; bis(1,2-cyclohexanedionedioximato)nickel(II), Ni(nox)2; and bis(2,3-pentanedionedioximato)nickel(II), Ni(meg)2, were prepared. Their volatilities were compared under ambient and reduced pressure using thermogravimetry. Ni(deg)2 and Ni(dpg)2 were the most volatile, and the variation in volatility of each complex was explained on the basis of ligand effects, crystal packing, and nickel-nickel distances using solid-state electronic spectra. The crystal structure of Ni(dpg)2 was determined for the first time: monoclinic crystal system, C2/c space group. The complex packs in pairs related by the c-glide plane symmetry. Short intrapair distances of 3.312(2) Å are observed between Ni and N with short and long Ni-Ni distances of 3.2044(5) and 5.7964(5) Å, respectively. Metal-organic chemical vapor deposition (MOCVD) experiments were conducted using Ni(deg)2 as precursor in a vertical cold-walled reactor. The precursor transport and film growth behavior, morphology, and composition have been examined. Pure films could be grown between 350 and 400°C in helium. Growth rates were greater with additional hydrogen, but the films were heavily contaminated with carbon. The difference in growth rates and film morphology for the different reactor conditions was investigated.

Original languageEnglish
Pages (from-to)2525-2532
Number of pages8
JournalChemistry of Materials
Issue number9
Publication statusPublished - 1 Sep 1998


ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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