Ultra-thin charge selective systems based on MeSxHy (Me = In, Cu, Pb)

S. Gavrilov, Th Dittrich, B. Lim, Abdelhak Belaidi, M. Lux-Steiner

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8 Citations (Scopus)

Abstract

Ultra-thin MeSxHy (Me = In, Cu, Pb) heterojunctions were sandwiched between compact TiO2 and PEDOT:PSS layers. The MeSxHy layers were prepared by SILAR (successive ion layer adsorption and reaction). Intensity and temperature dependent current-voltage characteristics were investigated for small area solar cell structures. Highest values of open circuit voltage (0.9 V) were obtained for the In2S3/PbInxSyHz system annealed at moderate temperatures (150-200 °C) while PbInxSyHz did not act as an absorber. Largest values of short circuit current were reached for the In2S3/CuInxSyHz system in which both layers act as an absorber. The role of Pb and hydrosulfide for interface formation and defect passivation is discussed.

Original languageEnglish
Pages (from-to)7051-7054
Number of pages4
JournalThin Solid Films
Volume516
Issue number20
DOIs
Publication statusPublished - 30 Aug 2008
Externally publishedYes

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Keywords

  • Heterojunction
  • Interfaces
  • SILAR deposition
  • Solar cells
  • Ultra-thin absorber

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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