Two-transistor active pixel image sensor with active diode reset

Dongwei Zhang, Frank He, Amine Bermak, Mansun Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1468-1470
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zhang, D., He, F., Bermak, A., & Chan, M. (2010). Two-transistor active pixel image sensor with active diode reset. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1468-1470). [5667549] https://doi.org/10.1109/ICSICT.2010.5667549