Two-transistor active pixel image sensor with active diode reset

Dongwei Zhang, Frank He, Amine Bermak, Mansun Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1468-1470
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

Fingerprint

Image sensors
Transistors
Diodes
Pixels
Photodiodes
Sensors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zhang, D., He, F., Bermak, A., & Chan, M. (2010). Two-transistor active pixel image sensor with active diode reset. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1468-1470). [5667549] https://doi.org/10.1109/ICSICT.2010.5667549

Two-transistor active pixel image sensor with active diode reset. / Zhang, Dongwei; He, Frank; Bermak, Amine; Chan, Mansun.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1468-1470 5667549.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, D, He, F, Bermak, A & Chan, M 2010, Two-transistor active pixel image sensor with active diode reset. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667549, pp. 1468-1470, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667549
Zhang D, He F, Bermak A, Chan M. Two-transistor active pixel image sensor with active diode reset. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1468-1470. 5667549 https://doi.org/10.1109/ICSICT.2010.5667549
Zhang, Dongwei ; He, Frank ; Bermak, Amine ; Chan, Mansun. / Two-transistor active pixel image sensor with active diode reset. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1468-1470
@inproceedings{720f3880190e4c59a8222c4f840c75a2,
title = "Two-transistor active pixel image sensor with active diode reset",
abstract = "A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38{\%}. The pixel characteristics are presented and discussed.",
author = "Dongwei Zhang and Frank He and Amine Bermak and Mansun Chan",
year = "2010",
doi = "10.1109/ICSICT.2010.5667549",
language = "English",
isbn = "9781424457984",
pages = "1468--1470",
booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

}

TY - GEN

T1 - Two-transistor active pixel image sensor with active diode reset

AU - Zhang, Dongwei

AU - He, Frank

AU - Bermak, Amine

AU - Chan, Mansun

PY - 2010

Y1 - 2010

N2 - A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.

AB - A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm x 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.

UR - http://www.scopus.com/inward/record.url?scp=78751563475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751563475&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667549

DO - 10.1109/ICSICT.2010.5667549

M3 - Conference contribution

SN - 9781424457984

SP - 1468

EP - 1470

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

ER -