Two-dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization

D. El-Khatouri, A. Khater, M. Balkanski, J. Tuchendler

Research output: Contribution to journalArticle

Abstract

Experimental results for the magnetoconductance of the layered semiconductor InSe at low temperatures are presented for both Hc and Hc configuration in externally applied magnetic fields. They are well represented by the theoretical results of weak localization for two-dimensional magnetoconductance, for a system the thickness of which is ∼15 nm, which is the average distance between stacking faults along the c axis. These results confirm the anisotropic character of electrical transport, and signal the effects of weak disorder, in this material.

Original languageEnglish
Pages (from-to)5409-5411
Number of pages3
JournalJournal of Applied Physics
Volume66
Issue number11
DOIs
Publication statusPublished - 1989
Externally publishedYes

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crystal defects
disorders
configurations
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization. / El-Khatouri, D.; Khater, A.; Balkanski, M.; Tuchendler, J.

In: Journal of Applied Physics, Vol. 66, No. 11, 1989, p. 5409-5411.

Research output: Contribution to journalArticle

El-Khatouri, D. ; Khater, A. ; Balkanski, M. ; Tuchendler, J. / Two-dimensional quantum corrections to the magnetoconductance of InSe at low temperatures owing to weak localization. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 11. pp. 5409-5411.
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