Experimental results for the magnetoconductance of the layered semiconductor InSe at low temperatures are presented for both H∥c and H⊥c configuration in externally applied magnetic fields. They are well represented by the theoretical results of weak localization for two-dimensional magnetoconductance, for a system the thickness of which is ∼15 nm, which is the average distance between stacking faults along the c axis. These results confirm the anisotropic character of electrical transport, and signal the effects of weak disorder, in this material.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)