Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization

D. El-Khatouri, A. Khater, M. Balkanski, C. Julien, J. P. Guesdon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Experimental results for the electrical conductivity of the layered semiconductor InSe are reported. At low temperatures they are well represented by weak localization theory for two-dimensional conductance which illustrates the weak disorder owing to the presence of large concentrations of stacking faults.

Original languageEnglish
Pages (from-to)2049-2051
Number of pages3
JournalJournal of Applied Physics
Volume66
Issue number5
DOIs
Publication statusPublished - 1989
Externally publishedYes

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crystal defects
disorders
conductivity
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization. / El-Khatouri, D.; Khater, A.; Balkanski, M.; Julien, C.; Guesdon, J. P.

In: Journal of Applied Physics, Vol. 66, No. 5, 1989, p. 2049-2051.

Research output: Contribution to journalArticle

El-Khatouri, D. ; Khater, A. ; Balkanski, M. ; Julien, C. ; Guesdon, J. P. / Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 5. pp. 2049-2051.
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