Two-dimensional conductivity in the layered semiconductor InSe at low temperatures owing to weak localization

D. El-Khatouri, A. Khater, M. Balkanski, C. Julien, J. P. Guesdon

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    Abstract

    Experimental results for the electrical conductivity of the layered semiconductor InSe are reported. At low temperatures they are well represented by weak localization theory for two-dimensional conductance which illustrates the weak disorder owing to the presence of large concentrations of stacking faults.

    Original languageEnglish
    Pages (from-to)2049-2051
    Number of pages3
    JournalJournal of Applied Physics
    Volume66
    Issue number5
    DOIs
    Publication statusPublished - 1 Dec 1989

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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