An overview of the contactless two-color optical technique for monitoring carrier transport processes at Si/SiO2 interfaces was presented. The technique involved application of a high intensity pump laser for injection of electrons into the oxide. The results showed that the electron-tunneling rate decreases with time at room temperature after the x-ray irradiation, indicating that the electron transport-mediating traps may be annealed at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)