Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

Z. Marka, R. Pasternak, R. G. Albridge, Sergey Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An overview of the contactless two-color optical technique for monitoring carrier transport processes at Si/SiO2 interfaces was presented. The technique involved application of a high intensity pump laser for injection of electrons into the oxide. The results showed that the electron-tunneling rate decreases with time at room temperature after the x-ray irradiation, indicating that the electron transport-mediating traps may be annealed at room temperature.

Original languageEnglish
Pages (from-to)1865-1870
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number4
DOIs
Publication statusPublished - 15 Feb 2003
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Marka, Z., Pasternak, R., Albridge, R. G., Rashkeev, S., Pantelides, S. T., Tolk, N. H., Choi, B. K., Fleetwood, D. M., & Schrimpf, R. D. (2003). Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2 Journal of Applied Physics, 93(4), 1865-1870. https://doi.org/10.1063/1.1534904