Organometal halide perovskites have attracted tremendous attention for optoelectronic applications. Charge carrier trapping is one of the dominant processes often deteriorating the performance of devices. Here, we investigate the details of trap behavior in colloidal nanoparticles (NPs) of CH3NH3PbBr3 perovskites with mean size of 8 nm and the corresponding bulk crystals (BCs). We use excitation intensity dependence of photoluminescence (PL) dynamics together with comprehensive simulation of charge carrier trapping and the trap-state dynamics. In the bulk at very low excitation intensities the PL is quenched by trapping. A considerable fraction of the traps become filled if excitation fluence is increased. We identified two different traps, one exhibiting ultralong lifetime (∼70 μs) which leads to efficient accumulation of trap filling even at relatively low excitation intensities. In colloidal NPs, the average number of surface traps is estimated to be 0.7 per NP. It means about 30% excitation would undergo trap-free radiative recombination. The trapping time constant of 7 ns is orders of magnitude longer than the usual trapping times in typical colloidal quantum dots indicating semipassivation of the trap states by a large barrier which slows down the process in the perovskite NPs. We also note that due to the localized character of photogenerated electron-hole pairs in NPs the trapping efficiency is reduced compared to the freely moving charges in BCs. Our results offer insight into the details of photophysics of colloidal perovskite nanoparticles which show promise for light-emitting diode and laser applications.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films