Transport in molecular transistors

Symmetry effects and nonlinearities

Sergey Rashkeev, M. Di Ventra, S. T. Pantelides

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents.

Original languageEnglish
Article number033301
Pages (from-to)333011-333013
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number3
Publication statusPublished - 15 Jul 2002
Externally publishedYes

Fingerprint

Stark effect
Drain current
Dipole moment
Electric current control
Amplification
Transistors
transistors
nonlinearity
Molecules
Electric potential
symmetry
dipole moments
moments
electric potential
molecules

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transport in molecular transistors : Symmetry effects and nonlinearities. / Rashkeev, Sergey; Di Ventra, M.; Pantelides, S. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 3, 033301, 15.07.2002, p. 333011-333013.

Research output: Contribution to journalArticle

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