Transport in molecular transistors: Symmetry effects and nonlinearities

S. N. Rashkeev, M. Di Ventra, S. T. Pantelides

Research output: Contribution to journalArticle

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We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents.

Original languageEnglish
Article number033301
Pages (from-to)333011-333013
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
Publication statusPublished - 15 Jul 2002


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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