Transmission Kikuchi diffraction from nano-crystalline Ti and TiN thin-films

T. Mungole, J. Zhang, Bilal Mansoor, G. Ayoub, D. P. Field

Research output: Contribution to journalConference article

Abstract

Nano-crystalline Ti and TiN thin-films fabricated on <100> P-type Si wafers via magnetron sputtering are characterized by transmission Kikuchi Diffraction (TKD) in an FEI Sirion scanning electron microscope (SEM). A simple and cost-effective sample preparation combined with the TKD experiment at working distance of ∼ 3 mm and a tilt of 35° produced indexable Kikuchi patterns. Pole figures generated by automatic and manual indexing revealed <0001>|| normal direction (ND) fiber texture and <111>||ND fiber texture in monolithic Ti and TiN thin-films, respectively. Glancing angle x-ray diffraction results corroborated the texture in the samples. Spatial resolution of ∼ 60 nm is achieved that is close to the limit of resolution in conventional electron backscatter diffraction (EBSD). It is demonstrated that a simple sample preparation method in TKD technique combined with selected area electron diffraction (SAED) in transmission electron microscope (TEM) may reveal fundamental knowledge about different mechanisms occurring during fabrication and processing of the thin-film systems.

Original languageEnglish
Article number012009
JournalIOP Conference Series: Materials Science and Engineering
Volume375
Issue number1
DOIs
Publication statusPublished - 18 Jun 2018
Event18th International Conference on Textures of Materials, ICOTOM 2017 - St George, United States
Duration: 6 Nov 201710 Nov 2017

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Diffraction
Crystalline materials
Thin films
Textures
Electron diffraction
Electron microscopes
Fibers
Magnetron sputtering
Poles
Scanning
Fabrication
X rays
Processing
Costs
Experiments
Direction compound

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Transmission Kikuchi diffraction from nano-crystalline Ti and TiN thin-films. / Mungole, T.; Zhang, J.; Mansoor, Bilal; Ayoub, G.; Field, D. P.

In: IOP Conference Series: Materials Science and Engineering, Vol. 375, No. 1, 012009, 18.06.2018.

Research output: Contribution to journalConference article

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AU - Mungole, T.

AU - Zhang, J.

AU - Mansoor, Bilal

AU - Ayoub, G.

AU - Field, D. P.

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N2 - Nano-crystalline Ti and TiN thin-films fabricated on <100> P-type Si wafers via magnetron sputtering are characterized by transmission Kikuchi Diffraction (TKD) in an FEI Sirion scanning electron microscope (SEM). A simple and cost-effective sample preparation combined with the TKD experiment at working distance of ∼ 3 mm and a tilt of 35° produced indexable Kikuchi patterns. Pole figures generated by automatic and manual indexing revealed <0001>|| normal direction (ND) fiber texture and <111>||ND fiber texture in monolithic Ti and TiN thin-films, respectively. Glancing angle x-ray diffraction results corroborated the texture in the samples. Spatial resolution of ∼ 60 nm is achieved that is close to the limit of resolution in conventional electron backscatter diffraction (EBSD). It is demonstrated that a simple sample preparation method in TKD technique combined with selected area electron diffraction (SAED) in transmission electron microscope (TEM) may reveal fundamental knowledge about different mechanisms occurring during fabrication and processing of the thin-film systems.

AB - Nano-crystalline Ti and TiN thin-films fabricated on <100> P-type Si wafers via magnetron sputtering are characterized by transmission Kikuchi Diffraction (TKD) in an FEI Sirion scanning electron microscope (SEM). A simple and cost-effective sample preparation combined with the TKD experiment at working distance of ∼ 3 mm and a tilt of 35° produced indexable Kikuchi patterns. Pole figures generated by automatic and manual indexing revealed <0001>|| normal direction (ND) fiber texture and <111>||ND fiber texture in monolithic Ti and TiN thin-films, respectively. Glancing angle x-ray diffraction results corroborated the texture in the samples. Spatial resolution of ∼ 60 nm is achieved that is close to the limit of resolution in conventional electron backscatter diffraction (EBSD). It is demonstrated that a simple sample preparation method in TKD technique combined with selected area electron diffraction (SAED) in transmission electron microscope (TEM) may reveal fundamental knowledge about different mechanisms occurring during fabrication and processing of the thin-film systems.

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