Thermal and dynamic responses of Ag implants in silicon carbide

W. Jiang, W. J. Weber, V. Shutthanandan, L. Li, S. Thevuthasan

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A single crystal wafer of 6H-SiC was sequentially implanted in two different areas at 210 and 873 K, respectively, to the same fluence of 500 Ag2+/nm2. Rutherford backscattering spectrometry (RBS) has been used in a random orientation to profile the Ag implants and along the 〈0001〉-axial channeling direction to determine the defect concentrations. Additional irradiation at 873 K with 5.4 MeV Si2+ ions does not promote diffusion of the implants in either the crystalline or fully amorphized SiC. There is no evidence of significant diffusion of the implanted Ag in crystalline SiC during thermal annealing at temperatures up to 1573 K. However, it appears that the Ag tends to diffuse toward the surface in amorphous SiC at 1573 K.

Original languageEnglish
Pages (from-to)642-646
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - Jun 2004
Externally publishedYes

Fingerprint

dynamic response
Silicon carbide
silicon carbides
Dynamic response
Crystalline materials
Rutherford backscattering spectroscopy
Spectrometry
backscattering
fluence
Irradiation
Single crystals
wafers
Annealing
Ions
Defects
irradiation
annealing
single crystals
defects
profiles

Keywords

  • Channeling
  • Implantation defects
  • Implants diffusion
  • Rutherford backscattering spectroscopy
  • SiC

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Thermal and dynamic responses of Ag implants in silicon carbide. / Jiang, W.; Weber, W. J.; Shutthanandan, V.; Li, L.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 219-220, No. 1-4, 06.2004, p. 642-646.

Research output: Contribution to journalArticle

Jiang, W. ; Weber, W. J. ; Shutthanandan, V. ; Li, L. ; Thevuthasan, S. / Thermal and dynamic responses of Ag implants in silicon carbide. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2004 ; Vol. 219-220, No. 1-4. pp. 642-646.
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