The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim, Sangchul Oh, Ju Jin Kim, Jeong O. Lee, Jong Wan Park, Kyung Hwa Yoo, Hyuk Chan Kwon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

Original languageEnglish
Pages (from-to)1794-1795
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
Publication statusPublished - 1 Dec 2000
Externally publishedYes

Fingerprint

Single electron transistors
single electron transistors
Tunnels
Metals
retarding
Magnetic fields
oscillations
tunnels
metals
Transport properties
magnetic fields
Electric potential
transport properties
electric potential

Keywords

  • Coulomb blockade
  • Ferromagnetic tunnel junction
  • Single electron transistor
  • Single electron tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, J., Oh, S., Kim, J. J., Lee, J. O., Park, J. W., Yoo, K. H., & Kwon, H. C. (2000). The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. Physica B: Condensed Matter, 284-288(PART II), 1794-1795.

The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. / Kim, Jinhee; Oh, Sangchul; Kim, Ju Jin; Lee, Jeong O.; Park, Jong Wan; Yoo, Kyung Hwa; Kwon, Hyuk Chan.

In: Physica B: Condensed Matter, Vol. 284-288, No. PART II, 01.12.2000, p. 1794-1795.

Research output: Contribution to journalArticle

Kim, J, Oh, S, Kim, JJ, Lee, JO, Park, JW, Yoo, KH & Kwon, HC 2000, 'The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor', Physica B: Condensed Matter, vol. 284-288, no. PART II, pp. 1794-1795.
Kim, Jinhee ; Oh, Sangchul ; Kim, Ju Jin ; Lee, Jeong O. ; Park, Jong Wan ; Yoo, Kyung Hwa ; Kwon, Hyuk Chan. / The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor. In: Physica B: Condensed Matter. 2000 ; Vol. 284-288, No. PART II. pp. 1794-1795.
@article{07bbfeb7fcb948d9863bd59f50500d7f,
title = "The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor",
abstract = "The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.",
keywords = "Coulomb blockade, Ferromagnetic tunnel junction, Single electron transistor, Single electron tunneling",
author = "Jinhee Kim and Sangchul Oh and Kim, {Ju Jin} and Lee, {Jeong O.} and Park, {Jong Wan} and Yoo, {Kyung Hwa} and Kwon, {Hyuk Chan}",
year = "2000",
month = "12",
day = "1",
language = "English",
volume = "284-288",
pages = "1794--1795",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "PART II",

}

TY - JOUR

T1 - The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

AU - Kim, Jinhee

AU - Oh, Sangchul

AU - Kim, Ju Jin

AU - Lee, Jeong O.

AU - Park, Jong Wan

AU - Yoo, Kyung Hwa

AU - Kwon, Hyuk Chan

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

AB - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

KW - Coulomb blockade

KW - Ferromagnetic tunnel junction

KW - Single electron transistor

KW - Single electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=0033706094&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033706094&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033706094

VL - 284-288

SP - 1794

EP - 1795

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - PART II

ER -