The origin of photoluminescence lines in irradiated amorphous SiO2

Tamas Bakos, Sergey Rashkeev, Sokrates T. Pantelides

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The origin of photoluminescence lines in irradiated amorphous silicon dioxide (SiO2) was presented. The results of first-principles calculations described a complete cycle of electronic transitions. The results showed that the two different defects were equally likely to be responsible: nonbridging oxygen atoms and hydroxyl (OH) groups weakly bonded to fourfold coordinate network silicon atoms.

Original languageEnglish
Pages (from-to)2713-2717
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
Publication statusPublished - 1 Dec 2002
Externally publishedYes

Fingerprint

amorphous silicon
oxygen atoms
Photoluminescence
silicon dioxide
photoluminescence
Atoms
cycles
defects
silicon
Amorphous silicon
electronics
atoms
Silica
Silicon
Defects
Oxygen

Keywords

  • Color centers
  • Hydroxyl (OH) groups
  • Nonbridging oxygen-hole center (NBOHC)
  • Optical fibers
  • Photoluminescence

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

The origin of photoluminescence lines in irradiated amorphous SiO2 . / Bakos, Tamas; Rashkeev, Sergey; Pantelides, Sokrates T.

In: IEEE Transactions on Nuclear Science, Vol. 49 I, No. 6, 01.12.2002, p. 2713-2717.

Research output: Contribution to journalArticle

Bakos, Tamas ; Rashkeev, Sergey ; Pantelides, Sokrates T. / The origin of photoluminescence lines in irradiated amorphous SiO2 In: IEEE Transactions on Nuclear Science. 2002 ; Vol. 49 I, No. 6. pp. 2713-2717.
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