The origin of photoluminescence lines in irradiated amorphous silicon dioxide (SiO2) was presented. The results of first-principles calculations described a complete cycle of electronic transitions. The results showed that the two different defects were equally likely to be responsible: nonbridging oxygen atoms and hydroxyl (OH) groups weakly bonded to fourfold coordinate network silicon atoms.
- Color centers
- Hydroxyl (OH) groups
- Nonbridging oxygen-hole center (NBOHC)
- Optical fibers
ASJC Scopus subject areas
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering