The origin of photoluminescence lines in irradiated amorphous SiO2

Tamas Bakos, Sergey Rashkeev, Sokrates T. Pantelides

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The origin of photoluminescence lines in irradiated amorphous silicon dioxide (SiO2) was presented. The results of first-principles calculations described a complete cycle of electronic transitions. The results showed that the two different defects were equally likely to be responsible: nonbridging oxygen atoms and hydroxyl (OH) groups weakly bonded to fourfold coordinate network silicon atoms.

Original languageEnglish
Pages (from-to)2713-2717
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume49 I
Issue number6
DOIs
Publication statusPublished - 1 Dec 2002
Externally publishedYes

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Keywords

  • Color centers
  • Hydroxyl (OH) groups
  • Nonbridging oxygen-hole center (NBOHC)
  • Optical fibers
  • Photoluminescence

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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