The microstructure of dislocation clusters in industrial directionally solidified multicrystalline silicon

Maulid Kivambe, Gaute Stokkan, Torunn Ervik, Birgit Ryningen, Otto Lohne

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The microstructure of commonly occurring dislocation patterns in industrial directionally solidified multicrystalline silicon has been systematically studied by light microscopy, electron backscatter diffraction, and transmission electron microscopy. The work has been focused on dislocation clusters on wafers near the top of cast blocks. In near {111} grain surface, dislocation arrays parallel to {110} plane traces are lying in parallel rows of {111} planes inclined to the surface, in mainly 〈112〉 30° orientation. The dislocation configuration suggests that the microstructure may result from a recovery process. The dislocations formed during crystal growth and cooling have undergone transformations at high temperature in order to achieve low energy configurations for minimization of dislocation and crystal energy.

Original languageEnglish
Article number063524
JournalJournal of Applied Physics
Volume110
Issue number6
DOIs
Publication statusPublished - 15 Sep 2011
Externally publishedYes

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microstructure
silicon
configurations
casts
crystal growth
electron microscopy
recovery
wafers
cooling
transmission electron microscopy
optimization
energy
diffraction
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The microstructure of dislocation clusters in industrial directionally solidified multicrystalline silicon. / Kivambe, Maulid; Stokkan, Gaute; Ervik, Torunn; Ryningen, Birgit; Lohne, Otto.

In: Journal of Applied Physics, Vol. 110, No. 6, 063524, 15.09.2011.

Research output: Contribution to journalArticle

Kivambe, Maulid ; Stokkan, Gaute ; Ervik, Torunn ; Ryningen, Birgit ; Lohne, Otto. / The microstructure of dislocation clusters in industrial directionally solidified multicrystalline silicon. In: Journal of Applied Physics. 2011 ; Vol. 110, No. 6.
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