The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

Antoine Autruffe, Maulid Kivambe, Lars Arnberg, Marisa Di Sabatino

Research output: Contribution to journalArticle

5 Citations (Scopus)


We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
Publication statusPublished - 1 Jan 2016



  • dislocations
  • grain boundary
  • impurities
  • precipitates
  • quasi-mono silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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