The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon

Antoine Autruffe, Maulid Kivambe, Lars Arnberg, Marisa Di Sabatino

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the source of dislocations generated during growth and subsequent cooling of quasi-monocrystalline silicon. Bi-crystals of silicon separated by ∼5.2° tilt small angle grain boundary have been directionally solidified at two different pulling rates, i.e., 3 and 13 μm s-1. We observe higher density of grain boundary-associated dislocations at the ingot pulled at a lower rate. This observation is explained by the impact of oxygen precipitation behavior at the grain boundary.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume213
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016

Fingerprint

Silicon
Dislocations (crystals)
Solidification
Seed
seeds
Grain boundaries
grain boundaries
Oxygen
silicon
oxygen
Monocrystalline silicon
pulling
ingots
Ingots
Cooling
cooling
Crystals
crystals

Keywords

  • dislocations
  • grain boundary
  • impurities
  • precipitates
  • quasi-mono silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon. / Autruffe, Antoine; Kivambe, Maulid; Arnberg, Lars; Di Sabatino, Marisa.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 213, No. 1, 01.01.2016, p. 122-126.

Research output: Contribution to journalArticle

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