The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon

Maulid Kivambe, G. Stokkan, T. Ervik, S. Castellanos, J. Hofstetter, T. Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Light microscopy, electron backscatter diffraction and transmission electron microscopy is employed to investigate dislocation structure and impurity precipitation in commonly occurring dislocation clusters as observed on defect-etched directionally solidified multicrystalline silicon wafers. The investigation shows that poligonised structures consist of parallel mostly similar, straight, well-ordered dislocations, with minimal contact-interaction and no evidence of precipitate decoration. On the other hand, disordered structures consist of various dislocation types, with interactions being common. Decoration of dislocations by second phase particles is observed in some cases. Enhanced recombination activity of dislocations may therefore be a result of dislocation interaction forming tangles, microscopic kinks and jogs, which can serve as heterogeneous nucleation sites that enhance metallic decoration.

Original languageEnglish
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages71-76
Number of pages6
Volume205-206
ISBN (Print)9783037858240
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford
Duration: 22 Sep 201327 Sep 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)10120394

Other

Other15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CityOxford
Period22/9/1327/9/13

Fingerprint

Silicon
Impurities
impurities
silicon
Silicon wafers
Electron diffraction
Optical microscopy
Precipitates
Nucleation
Transmission electron microscopy
Defects
interactions
precipitates
electron microscopy
nucleation
wafers
transmission electron microscopy
defects
diffraction

Keywords

  • Dislocations
  • Impurity decoration
  • Multicrystalline silicon
  • Recombination activity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Kivambe, M., Stokkan, G., Ervik, T., Castellanos, S., Hofstetter, J., & Buonassisi, T. (2014). The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. In Solid State Phenomena (Vol. 205-206, pp. 71-76). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.71

The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. / Kivambe, Maulid; Stokkan, G.; Ervik, T.; Castellanos, S.; Hofstetter, J.; Buonassisi, T.

Solid State Phenomena. Vol. 205-206 Trans Tech Publications Ltd, 2014. p. 71-76 (Solid State Phenomena; Vol. 205-206).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kivambe, M, Stokkan, G, Ervik, T, Castellanos, S, Hofstetter, J & Buonassisi, T 2014, The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. in Solid State Phenomena. vol. 205-206, Solid State Phenomena, vol. 205-206, Trans Tech Publications Ltd, pp. 71-76, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, Oxford, 22/9/13. https://doi.org/10.4028/www.scientific.net/SSP.205-206.71
Kivambe M, Stokkan G, Ervik T, Castellanos S, Hofstetter J, Buonassisi T. The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. In Solid State Phenomena. Vol. 205-206. Trans Tech Publications Ltd. 2014. p. 71-76. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.205-206.71
Kivambe, Maulid ; Stokkan, G. ; Ervik, T. ; Castellanos, S. ; Hofstetter, J. ; Buonassisi, T. / The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. Solid State Phenomena. Vol. 205-206 Trans Tech Publications Ltd, 2014. pp. 71-76 (Solid State Phenomena).
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