The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon

M. Kivambe, G. Stokkan, T. Ervik, S. Castellanos, J. Hofstetter, T. Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Light microscopy, electron backscatter diffraction and transmission electron microscopy is employed to investigate dislocation structure and impurity precipitation in commonly occurring dislocation clusters as observed on defect-etched directionally solidified multicrystalline silicon wafers. The investigation shows that poligonised structures consist of parallel mostly similar, straight, well-ordered dislocations, with minimal contact-interaction and no evidence of precipitate decoration. On the other hand, disordered structures consist of various dislocation types, with interactions being common. Decoration of dislocations by second phase particles is observed in some cases. Enhanced recombination activity of dislocations may therefore be a result of dislocation interaction forming tangles, microscopic kinks and jogs, which can serve as heterogeneous nucleation sites that enhance metallic decoration.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages71-76
Number of pages6
ISBN (Print)9783037858240
DOIs
Publication statusPublished - 1 Jan 2014
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: 22 Sep 201327 Sep 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Conference

Conference15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CountryUnited Kingdom
CityOxford
Period22/9/1327/9/13

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Keywords

  • Dislocations
  • Impurity decoration
  • Multicrystalline silicon
  • Recombination activity

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kivambe, M., Stokkan, G., Ervik, T., Castellanos, S., Hofstetter, J., & Buonassisi, T. (2014). The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon. In Gettering and Defect Engineering in Semiconductor Technology XV (pp. 71-76). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.71