The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing

M. Bär, A. Ennaoui, J. Klaer, R. Sáez-Araoz, T. Kropp, L. Weinhardt, C. Heske, H. W. Schock, Ch H. Fischer, M. C. Lux-Steiner

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27 Citations (Scopus)


Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.

Original languageEnglish
Pages (from-to)71-74
Number of pages4
JournalChemical Physics Letters
Issue number1-3
Publication statusPublished - 29 Dec 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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    Bär, M., Ennaoui, A., Klaer, J., Sáez-Araoz, R., Kropp, T., Weinhardt, L., Heske, C., Schock, H. W., Fischer, C. H., & Lux-Steiner, M. C. (2006). The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing. Chemical Physics Letters, 433(1-3), 71-74.