The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing

M. Bär, A. Ennaoui, J. Klaer, R. Sáez-Araoz, T. Kropp, L. Weinhardt, C. Heske, H. W. Schock, Ch H. Fischer, M. C. Lux-Steiner

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.

Original languageEnglish
Pages (from-to)71-74
Number of pages4
JournalChemical Physics Letters
Volume433
Issue number1-3
DOIs
Publication statusPublished - 29 Dec 2006
Externally publishedYes

Fingerprint

Commonwealth of Independent States
Electronic structure
Annealing
electronic structure
annealing
heat treatment
solar cells
Heat treatment
Open circuit voltage
Photoelectrons
open circuit voltage
Conversion efficiency
absorbers
Solar cells
Buffers
photoelectrons
buffers
X rays
thin films
spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing. / Bär, M.; Ennaoui, A.; Klaer, J.; Sáez-Araoz, R.; Kropp, T.; Weinhardt, L.; Heske, C.; Schock, H. W.; Fischer, Ch H.; Lux-Steiner, M. C.

In: Chemical Physics Letters, Vol. 433, No. 1-3, 29.12.2006, p. 71-74.

Research output: Contribution to journalArticle

Bär, M, Ennaoui, A, Klaer, J, Sáez-Araoz, R, Kropp, T, Weinhardt, L, Heske, C, Schock, HW, Fischer, CH & Lux-Steiner, MC 2006, 'The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing', Chemical Physics Letters, vol. 433, no. 1-3, pp. 71-74. https://doi.org/10.1016/j.cplett.2006.11.022
Bär, M. ; Ennaoui, A. ; Klaer, J. ; Sáez-Araoz, R. ; Kropp, T. ; Weinhardt, L. ; Heske, C. ; Schock, H. W. ; Fischer, Ch H. ; Lux-Steiner, M. C. / The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing. In: Chemical Physics Letters. 2006 ; Vol. 433, No. 1-3. pp. 71-74.
@article{3e1b93d3d32d4696b75957ec48b11fa8,
title = "The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing",
abstract = "Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.",
author = "M. B{\"a}r and A. Ennaoui and J. Klaer and R. S{\'a}ez-Araoz and T. Kropp and L. Weinhardt and C. Heske and Schock, {H. W.} and Fischer, {Ch H.} and Lux-Steiner, {M. C.}",
year = "2006",
month = "12",
day = "29",
doi = "10.1016/j.cplett.2006.11.022",
language = "English",
volume = "433",
pages = "71--74",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing

AU - Bär, M.

AU - Ennaoui, A.

AU - Klaer, J.

AU - Sáez-Araoz, R.

AU - Kropp, T.

AU - Weinhardt, L.

AU - Heske, C.

AU - Schock, H. W.

AU - Fischer, Ch H.

AU - Lux-Steiner, M. C.

PY - 2006/12/29

Y1 - 2006/12/29

N2 - Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.

AB - Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnS]/CIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing.

UR - http://www.scopus.com/inward/record.url?scp=33845381137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845381137&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2006.11.022

DO - 10.1016/j.cplett.2006.11.022

M3 - Article

AN - SCOPUS:33845381137

VL - 433

SP - 71

EP - 74

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 1-3

ER -