The effect of Se doping on spectroscopic and electrical properties of GeTe

Vinod Madhavan, K. S. Sangunni

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of GeSe and TeSe bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of GeSe, GeTe2 and TeSe bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.% of Se addition can enhance GeTe phase change memory properties.

Original languageEnglish
Pages (from-to)569-574
Number of pages6
JournalThin Solid Films
Volume550
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes

Fingerprint

Electric properties
electrical properties
Doping (additives)
Energy gap
X ray photoelectron spectroscopy
photoelectron spectroscopy
Phase change memory
x rays
Core levels
Selenium
high resistance
Amorphous films
Crystallization
selenium
Fourier transform infrared spectroscopy
Raman spectroscopy
Raman scattering
Tuning
infrared spectroscopy
tuning

Keywords

  • Phase change memory
  • Raman spectroscopy
  • XPS
  • XRD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

The effect of Se doping on spectroscopic and electrical properties of GeTe. / Madhavan, Vinod; Sangunni, K. S.

In: Thin Solid Films, Vol. 550, 01.01.2014, p. 569-574.

Research output: Contribution to journalArticle

@article{a6f2a2f5fb894a50bad7beea381cb43e,
title = "The effect of Se doping on spectroscopic and electrical properties of GeTe",
abstract = "Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.{\%} of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.{\%} Se alloy forms a homogeneous amorphous phase with a mixture of GeSe and TeSe bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of GeSe, GeTe2 and TeSe bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.{\%} Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.{\%} of Se addition can enhance GeTe phase change memory properties.",
keywords = "Phase change memory, Raman spectroscopy, XPS, XRD",
author = "Vinod Madhavan and Sangunni, {K. S.}",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2013.11.038",
language = "English",
volume = "550",
pages = "569--574",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - The effect of Se doping on spectroscopic and electrical properties of GeTe

AU - Madhavan, Vinod

AU - Sangunni, K. S.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of GeSe and TeSe bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of GeSe, GeTe2 and TeSe bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.% of Se addition can enhance GeTe phase change memory properties.

AB - Selenium doped thin films of GeTe alloys were investigated for their structural modifications by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron Spectroscopy (XPS) and Raman Spectroscopy. The band gap increase from 0.69 to 1.10 eV with increasing Se addition signifies the possibility of band gap tuning in the material. Disorder decreases, band widens and conductivity saturates about 0.20 at.% of Se addition. Structural changes are explained by the bond theory of solids. The as-deposited films are amorphous and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of GeSe and TeSe bonds. The XPS core level spectra and Raman spectra investigation clearly indicate the formation of GeSe, GeTe2 and TeSe bonds with Se addition. Crystallization temperature is found to be increasing with Se and the 0.10 at.% Se alloy is found to have a higher resistance contrast compared to other Se concentration alloys. Up to 0.10 at.% of Se addition can enhance GeTe phase change memory properties.

KW - Phase change memory

KW - Raman spectroscopy

KW - XPS

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=84890311441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890311441&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.11.038

DO - 10.1016/j.tsf.2013.11.038

M3 - Article

VL - 550

SP - 569

EP - 574

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -