The E′ center and oxygen vacancies in SiO2

S. T. Pantelides, Z. Y. Lu, C. Nicklaw, T. Bakos, Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf

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The E′ centers in crystalline and amorphous SiO2 trace their history to 1956 when Robert A. Weeks first used electron paramagnetic resonance (EPR) to study radiation-induced defects in quartz. Since then the primary defect responsible for the E′ family of EPR signals has been identified as a positively charged oxygen vacancy with asymmetric relaxations of the two neighboring Si atoms. In the last 15 years, two E′ centers, known as Eγ and Eδ have been found to play a key role in the dynamics of charged trapped caused by irradiation in Si metal-oxide-semiconductor (MOS) structures. In this paper, we give a brief overview of E′ centers and highlight recent theoretical results that have elucidated many experimental observations in MOS structures and other forms of SiO2, as presented in an invited talk at the XI Conference on the Physics of Non-Crystalline Solids.

Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalJournal of Non-Crystalline Solids
Issue number2-9
Publication statusPublished - 15 Jan 2008
Externally publishedYes



  • Defects
  • E′ center
  • Electron spin resonance
  • Silica

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Pantelides, S. T., Lu, Z. Y., Nicklaw, C., Bakos, T., Rashkeev, S., Fleetwood, D. M., & Schrimpf, R. D. (2008). The E′ center and oxygen vacancies in SiO2 Journal of Non-Crystalline Solids, 354(2-9), 217-223.