The deposition of Pb and PbO on various substrates by MOCVD using a new trinuclear lead precursor

Roman Hedinger, Thomas Kradolfer, Kaspar Hegetschweiler, Michael Wörle, Klaus Hermann Dahmen

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Abstract

The synthesis and characterization of the trinuclear, uncharged and volatile lead(II) complex [Pb3(H_3tdci)2]·5H2O (tdci = 1,3,5-trideoxy-1,3,5-tris(dimethylamino)-cis-inositol) is described. Despite its rather high molecular weight, this compound can be used as a precursor for the deposition of thin films of lead and lead(II) oxide by metal organic chemical vapor deposition (MOCVD). Experiments were carried out under reduced pressure in a temperature range of 450-550°C, using stainless steel, copper, and copper-, silver-, and gold-coated silicon as substrates, showing a preferential deposition on conducting substrates. The nature of the deposited films was analyzed.

Original languageEnglish
Pages (from-to)29-35
Number of pages7
JournalChemical Vapor Deposition
Volume5
Issue number1
Publication statusPublished - 1 Jan 1999

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Keywords

  • Lead
  • Lead(II) oxide
  • MOCVD
  • Polyamino-polyalcohols
  • Trinuclear precursor

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

Cite this

Hedinger, R., Kradolfer, T., Hegetschweiler, K., Wörle, M., & Dahmen, K. H. (1999). The deposition of Pb and PbO on various substrates by MOCVD using a new trinuclear lead precursor. Chemical Vapor Deposition, 5(1), 29-35.