The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Jinhee Kim, Ju Jin Kim, Sangchul Oh, Jeong O. Lee, Kyung Hwa Yoo, Se Il Park, Kyu Tae Kim

Research output: Contribution to journalArticle

Abstract

The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

Original languageEnglish
Pages (from-to)1830-1831
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 1 Jan 2000

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Keywords

  • Coulomb blockade
  • Josephson effect
  • Single-electron transistor
  • Single-electron tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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