Temperature response of 1313 atoms in amorphized 6H-SiC

W. Jiang, Y. Zhang, V. Shutthanandan, S. Thevuthasan, W. J. Weber

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4 Citations (Scopus)

Abstract

Implantation of C 2+ 13 ions was employed to produce a concentration profile in 6H-SiC at 140 K. In situ study of C13 -implanted species was performed using the resonant reaction of C13 (p,γ) N14 at Ep =1.748 MeV. Significant C13 diffusion in the amorphized SiC does not occur up to 1130 K. The presence of Au implants (1.9 at. %) does not affect the C13 behavior. High-energy H+ irradiation also does not promote the C13 diffusion. The results suggest that C atoms are readily trapped locally in the SiC structure during disordering, which is important in understanding the amorphization and recrystallization processes in SiC.

Original languageEnglish
Article number261902
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006
Externally publishedYes

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atoms
implantation
irradiation
temperature
profiles
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jiang, W., Zhang, Y., Shutthanandan, V., Thevuthasan, S., & Weber, W. J. (2006). Temperature response of 1313 atoms in amorphized 6H-SiC. Applied Physics Letters, 89(26), [261902]. https://doi.org/10.1063/1.2422892

Temperature response of 1313 atoms in amorphized 6H-SiC. / Jiang, W.; Zhang, Y.; Shutthanandan, V.; Thevuthasan, S.; Weber, W. J.

In: Applied Physics Letters, Vol. 89, No. 26, 261902, 2006.

Research output: Contribution to journalArticle

Jiang, W, Zhang, Y, Shutthanandan, V, Thevuthasan, S & Weber, WJ 2006, 'Temperature response of 1313 atoms in amorphized 6H-SiC', Applied Physics Letters, vol. 89, no. 26, 261902. https://doi.org/10.1063/1.2422892
Jiang W, Zhang Y, Shutthanandan V, Thevuthasan S, Weber WJ. Temperature response of 1313 atoms in amorphized 6H-SiC. Applied Physics Letters. 2006;89(26). 261902. https://doi.org/10.1063/1.2422892
Jiang, W. ; Zhang, Y. ; Shutthanandan, V. ; Thevuthasan, S. ; Weber, W. J. / Temperature response of 1313 atoms in amorphized 6H-SiC. In: Applied Physics Letters. 2006 ; Vol. 89, No. 26.
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