Temperature dependent fatigue in ferroelectric PZT thin films

E. N. Paton, Said Mansour, A. Bement

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The rate of electrical fatigue at different temperatures was measured for lead zirconate titanate capacitors with the composition Pb(Zr.60Ti.40)O3. Results showed that a temperature rise contributes to an increasing rate of logarithmic decay in the fatigue profile. We distinguish two thermally dependent stages during fatigue; each plotted as separate Arrhenius relationships. The first stage has an experimentally measured activation energy of 0.22 eV while the second stage has a measured value of 0.042 eV. The physical basis for these activation energies has not been identified due to the complexity of interactions occurring during the switching reversals. Even so, the measured values give some indication of the types of defects and the mechanisms responsible in each stage.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsB.M. Kulwicki, A. Amin, A. Safari
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages467-470
Number of pages4
Volume1
Publication statusPublished - 1 Dec 1996
Externally publishedYes
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: 18 Aug 199621 Aug 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period18/8/9621/8/96

Fingerprint

Ferroelectric thin films
Fatigue of materials
Activation energy
Temperature
Capacitors
Defects
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Paton, E. N., Mansour, S., & Bement, A. (1996). Temperature dependent fatigue in ferroelectric PZT thin films. In B. M. Kulwicki, A. Amin, & A. Safari (Eds.), IEEE International Symposium on Applications of Ferroelectrics (Vol. 1, pp. 467-470). Piscataway, NJ, United States: IEEE.

Temperature dependent fatigue in ferroelectric PZT thin films. / Paton, E. N.; Mansour, Said; Bement, A.

IEEE International Symposium on Applications of Ferroelectrics. ed. / B.M. Kulwicki; A. Amin; A. Safari. Vol. 1 Piscataway, NJ, United States : IEEE, 1996. p. 467-470.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Paton, EN, Mansour, S & Bement, A 1996, Temperature dependent fatigue in ferroelectric PZT thin films. in BM Kulwicki, A Amin & A Safari (eds), IEEE International Symposium on Applications of Ferroelectrics. vol. 1, IEEE, Piscataway, NJ, United States, pp. 467-470, Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 18/8/96.
Paton EN, Mansour S, Bement A. Temperature dependent fatigue in ferroelectric PZT thin films. In Kulwicki BM, Amin A, Safari A, editors, IEEE International Symposium on Applications of Ferroelectrics. Vol. 1. Piscataway, NJ, United States: IEEE. 1996. p. 467-470
Paton, E. N. ; Mansour, Said ; Bement, A. / Temperature dependent fatigue in ferroelectric PZT thin films. IEEE International Symposium on Applications of Ferroelectrics. editor / B.M. Kulwicki ; A. Amin ; A. Safari. Vol. 1 Piscataway, NJ, United States : IEEE, 1996. pp. 467-470
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