TEM characterization of near sub-grain boundary dislocations in directionally solidified multicrystalline silicon

Maulid Kivambe, Gaute Stokkan, Torunn Ervik, Birgit Ryningen, Otto Lohne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A crystal is known to achieve lower energy if lattice dislocations are re-arranged in arrays forming a sub-grain boundary through a recovery process. Interaction of boundary dislocations with glide dislocations is also expected to bring about local equilibrium. In this work, dislocations localized in the vicinity of a sub-grain boundary (misorientation < 5° ) are studied in detail by transmission electron microscopy in order to determine their source. Contrary to the processes described above, it appears that the sub-grain boundary is the source of these dislocations, which are emitted from some locally stressed parts of the boundary. Several slip systems have been activated along the boundary resulting in high density of dislocations. It appears, further, that dislocation propagation from one or more sources is disrupted by interaction with other dislocations or other defects. The dislocations from various sources will be piled up against the obstacles of the other, resulting in the localization of the dislocations close to the sub-grain boundary.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011
PublisherTrans Tech Publications Ltd
Pages307-312
Number of pages6
ISBN (Print)9783037852323
DOIs
Publication statusPublished - 1 Jan 2011
Event14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 - Loipersdorf, Austria
Duration: 25 Sep 201130 Sep 2011

Publication series

NameSolid State Phenomena
Volume178-179
ISSN (Print)1012-0394

Conference

Conference14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011
CountryAustria
CityLoipersdorf
Period25/9/1130/9/11

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Keywords

  • Dislocations
  • Mc-si
  • Sub grain boundaries
  • TEM

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kivambe, M., Stokkan, G., Ervik, T., Ryningen, B., & Lohne, O. (2011). TEM characterization of near sub-grain boundary dislocations in directionally solidified multicrystalline silicon. In Gettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011 (pp. 307-312). (Solid State Phenomena; Vol. 178-179). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.178-179.307