Synthesis of semiconductor nanowires by pulsed current electrodeposition of metal with subsequent sulfurization

S. Gavrilov, L. Nosova, I. Sieber, Abdelhak Belaidi, L. Dloczik, Th Dittrich

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Semiconductor nanowires of CdS and Cu xS were embedded into porous anodic alumina (PAA) by sulfurization of the metal precursors. Pores of PAA were filled with Cd and Cu by ac electrochemical preparation while the PAA layers remained on the Al-substrate. Deposited metal and semiconductor wires were characterized by scanning electron microscopy and X-ray diffraction. Photovoltage spectroscopy was applied to demonstrate semiconductor behaviour of CdS nanowires manufactured by the proposed technique.

Original languageEnglish
Pages (from-to)1497-1501
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number8
DOIs
Publication statusPublished - Jun 2005
Externally publishedYes

Fingerprint

Aluminum Oxide
Electrodeposition
electrodeposition
Nanowires
nanowires
Alumina
aluminum oxides
Metals
Semiconductor materials
synthesis
metals
photovoltages
Spectroscopy
wire
Wire
porosity
X ray diffraction
preparation
Scanning electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Synthesis of semiconductor nanowires by pulsed current electrodeposition of metal with subsequent sulfurization. / Gavrilov, S.; Nosova, L.; Sieber, I.; Belaidi, Abdelhak; Dloczik, L.; Dittrich, Th.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 202, No. 8, 06.2005, p. 1497-1501.

Research output: Contribution to journalArticle

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AU - Dloczik, L.

AU - Dittrich, Th

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