Semiconductor nanowires of CdS and Cu xS were embedded into porous anodic alumina (PAA) by sulfurization of the metal precursors. Pores of PAA were filled with Cd and Cu by ac electrochemical preparation while the PAA layers remained on the Al-substrate. Deposited metal and semiconductor wires were characterized by scanning electron microscopy and X-ray diffraction. Photovoltage spectroscopy was applied to demonstrate semiconductor behaviour of CdS nanowires manufactured by the proposed technique.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - Jun 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials