Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate

Z. Q. Yu, Y. Zhang, C. M. Wang, V. Shutthanandan, I. V. Lyubinetsky, M. H. Engelhard, L. V. Saraf, D. E. McCready, C. H. Henager, P. Nachimuthu, S. Thevuthasan

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thin film of silicon germanium (Si1-xGex) with tailored composition was grown on Si(1 0 0) substrate at 650 °C in an ultrahigh vacuum molecular beam epitaxy system. The quality of the film was investigated by Rutherford backscattering spectrometry (RBS) in random and channeling geometries, glancing angle X-ray diffraction, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The nominal x-value ranged from 0 to 0.14. RBS/channeling measurements indicate that the strain associated with lattice mismatch is compressive in the film. The film shows island growth, which is driven by interface misfit dislocation.

Original languageEnglish
Pages (from-to)723-726
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume261
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2007
Externally publishedYes

Fingerprint

Rutherford backscattering spectroscopy
Spectrometry
backscattering
Substrates
synthesis
spectroscopy
Germanium
Lattice mismatch
x rays
Ultrahigh vacuum
Silicon
High resolution transmission electron microscopy
Dislocations (crystals)
Molecular beam epitaxy
ultrahigh vacuum
Atomic force microscopy
germanium
molecular beam epitaxy
X ray photoelectron spectroscopy
photoelectron spectroscopy

Keywords

  • Channeling
  • Molecular beam epitaxy
  • Rutherford backscattering spectrometry
  • SiGe thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate. / Yu, Z. Q.; Zhang, Y.; Wang, C. M.; Shutthanandan, V.; Lyubinetsky, I. V.; Engelhard, M. H.; Saraf, L. V.; McCready, D. E.; Henager, C. H.; Nachimuthu, P.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 261, No. 1-2 SPEC. ISS., 08.2007, p. 723-726.

Research output: Contribution to journalArticle

Yu, ZQ, Zhang, Y, Wang, CM, Shutthanandan, V, Lyubinetsky, IV, Engelhard, MH, Saraf, LV, McCready, DE, Henager, CH, Nachimuthu, P & Thevuthasan, S 2007, 'Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 261, no. 1-2 SPEC. ISS., pp. 723-726. https://doi.org/10.1016/j.nimb.2007.04.139
Yu, Z. Q. ; Zhang, Y. ; Wang, C. M. ; Shutthanandan, V. ; Lyubinetsky, I. V. ; Engelhard, M. H. ; Saraf, L. V. ; McCready, D. E. ; Henager, C. H. ; Nachimuthu, P. ; Thevuthasan, S. / Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2007 ; Vol. 261, No. 1-2 SPEC. ISS. pp. 723-726.
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