Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate

Z. Q. Yu, Y. Zhang, C. M. Wang, V. Shutthanandan, I. V. Lyubinetsky, M. H. Engelhard, L. V. Saraf, D. E. McCready, C. H. Henager, P. Nachimuthu, S. Thevuthasan

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    Abstract

    Thin film of silicon germanium (Si1-xGex) with tailored composition was grown on Si(1 0 0) substrate at 650 °C in an ultrahigh vacuum molecular beam epitaxy system. The quality of the film was investigated by Rutherford backscattering spectrometry (RBS) in random and channeling geometries, glancing angle X-ray diffraction, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The nominal x-value ranged from 0 to 0.14. RBS/channeling measurements indicate that the strain associated with lattice mismatch is compressive in the film. The film shows island growth, which is driven by interface misfit dislocation.

    Original languageEnglish
    Pages (from-to)723-726
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume261
    Issue number1-2 SPEC. ISS.
    DOIs
    Publication statusPublished - 1 Aug 2007

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    Keywords

    • Channeling
    • Molecular beam epitaxy
    • Rutherford backscattering spectrometry
    • SiGe thin films

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

    Cite this

    Yu, Z. Q., Zhang, Y., Wang, C. M., Shutthanandan, V., Lyubinetsky, I. V., Engelhard, M. H., Saraf, L. V., McCready, D. E., Henager, C. H., Nachimuthu, P., & Thevuthasan, S. (2007). Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 261(1-2 SPEC. ISS.), 723-726. https://doi.org/10.1016/j.nimb.2007.04.139