Synthesis and characterization of cobalt silicide films on silicon

C. T. Joensson, I. A. Maximov, H. J. Whitlow, V. Shutthanandan, L. Saraf, D. E. McCready, B. W. Arey, Y. Zhang, S. Thevuthasan

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 μm thick Co films were deposited on Si(1 0 0) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 °C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 °C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 °C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains.

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2006
Externally publishedYes

Fingerprint

Silicon
Cobalt
cobalt
Rutherford backscattering spectroscopy
Annealing
Oxides
Spectrometry
silicon
synthesis
annealing
backscattering
Lattice mismatch
Nuclear reactions
Surface topography
Magnetron sputtering
Temperature
X ray diffraction analysis
oxides
Evaporation
nuclear reactions

Keywords

  • Cobalt silicide
  • Magnetron sputtering
  • NRA
  • RBS

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Joensson, C. T., Maximov, I. A., Whitlow, H. J., Shutthanandan, V., Saraf, L., McCready, D. E., ... Thevuthasan, S. (2006). Synthesis and characterization of cobalt silicide films on silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 SPEC. ISS.), 532-535. https://doi.org/10.1016/j.nimb.2006.03.046

Synthesis and characterization of cobalt silicide films on silicon. / Joensson, C. T.; Maximov, I. A.; Whitlow, H. J.; Shutthanandan, V.; Saraf, L.; McCready, D. E.; Arey, B. W.; Zhang, Y.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 532-535.

Research output: Contribution to journalArticle

Joensson, CT, Maximov, IA, Whitlow, HJ, Shutthanandan, V, Saraf, L, McCready, DE, Arey, BW, Zhang, Y & Thevuthasan, S 2006, 'Synthesis and characterization of cobalt silicide films on silicon', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 249, no. 1-2 SPEC. ISS., pp. 532-535. https://doi.org/10.1016/j.nimb.2006.03.046
Joensson, C. T. ; Maximov, I. A. ; Whitlow, H. J. ; Shutthanandan, V. ; Saraf, L. ; McCready, D. E. ; Arey, B. W. ; Zhang, Y. ; Thevuthasan, S. / Synthesis and characterization of cobalt silicide films on silicon. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 532-535.
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