Surface morphology and electrical properties of copper thin films prepared by MOCVD

M. Becht, K. H. Dahmen, F. Atamny, A. Baiker

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Thin copper films have been grown in a vertical MOCVD (Metal-Organic Chemical Vapor Deposition) reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper(II), Cu(thd)2, as precursor. Deposition has been carried out in a pure hydrogen atmosphere (pressure: 3, 20 mbar) at different substrate temperatures (350-750 ° C). The films have been investigated by profilometry, four-point resistivity measurements, ESCA, AES, XRD, AFM, and Normarsky microscopy. An unusual dependence of the film thickness with deposition time has been observed. Rapid growth occurred in the first minutes resulting in badly conducting films (thickness below 1000 Å). Good electrical resistivities have been obtained above 2000 Å. AFM has been used to gain information about the surface morphology of the films with different thicknesses. The grain size and surface roughness increased with increasing film thickness. Small grains grew in the beginning and the electrical properties have been governed by the highly Ohmic bridges between the individual grains.

Original languageEnglish
Pages (from-to)718-722
Number of pages5
JournalFresenius' Journal of Analytical Chemistry
Volume353
Issue number5-8
DOIs
Publication statusPublished - 1 Jan 1995
Externally publishedYes

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Organic Chemicals
Surface morphology
Film thickness
Copper
Chemical vapor deposition
Electric properties
Metals
Thin films
Atmosphere
Microscopy
Hydrogen
Profilometry
Pressure
Temperature
Microscopic examination
Growth
Surface roughness
Substrates

ASJC Scopus subject areas

  • Biochemistry

Cite this

Surface morphology and electrical properties of copper thin films prepared by MOCVD. / Becht, M.; Dahmen, K. H.; Atamny, F.; Baiker, A.

In: Fresenius' Journal of Analytical Chemistry, Vol. 353, No. 5-8, 01.01.1995, p. 718-722.

Research output: Contribution to journalArticle

Becht, M. ; Dahmen, K. H. ; Atamny, F. ; Baiker, A. / Surface morphology and electrical properties of copper thin films prepared by MOCVD. In: Fresenius' Journal of Analytical Chemistry. 1995 ; Vol. 353, No. 5-8. pp. 718-722.
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