Surface chemistry during porous-silicon formation in dilute fluoride electrolytes

Abdelhak Belaidi, M. Safi, F. Ozanam, J. N. Chazalviel, O. Gorochov

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In contrast to previous belief, we show that oxide is present at the silicon/dilute-fluoride electrolyte interface even near the onset of anodic current, which corresponds to the regime of porous-silicon formation. This point is supported by the observation of a transient anodic current when the potential is maintained in this region until a steady-state current is reached, then stepped to a value near that of the open-circuit potential. In situ infrared investigations confirm the presence of a submonolayer oxide film. Upon polarizing the interface, the electrochemical current and the surface concentrations of oxide and hydrogen exhibit slow relaxations. These transient features are accounted for in a simple kinetic model, which assumes two parallel dissolution pathways and a slow, potential-dependent relaxation of the electrochemically active surface area. In this framework, the transition to the electropolishing regime is found to correspond to unit coverage of the electrochemically active surface by the oxide.

Original languageEnglish
Pages (from-to)2659-2664
Number of pages6
JournalJournal of the Electrochemical Society
Volume146
Issue number7
DOIs
Publication statusPublished - Jul 1999
Externally publishedYes

Fingerprint

Porous silicon
Surface chemistry
porous silicon
Fluorides
Electrolytes
fluorides
electrolytes
chemistry
Oxides
Electrolytic polishing
oxides
Silicon
electropolishing
Oxide films
Dissolution
Infrared radiation
oxide films
Hydrogen
dissolving
Kinetics

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Surface chemistry during porous-silicon formation in dilute fluoride electrolytes. / Belaidi, Abdelhak; Safi, M.; Ozanam, F.; Chazalviel, J. N.; Gorochov, O.

In: Journal of the Electrochemical Society, Vol. 146, No. 7, 07.1999, p. 2659-2664.

Research output: Contribution to journalArticle

Belaidi, Abdelhak ; Safi, M. ; Ozanam, F. ; Chazalviel, J. N. ; Gorochov, O. / Surface chemistry during porous-silicon formation in dilute fluoride electrolytes. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 7. pp. 2659-2664.
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