Study of hydrogen stability in low-k dielectric films by ion beam techniques

Y. Zhang, L. Saraf, V. Shutthanandan, K. D. Hughes, R. Kuan, S. Thevuthasan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

With shrinking device geometries into the 65 nm technology node, a transition to low-k dielectrics becomes increasingly attractive. Negative bias temperature instability, which is associated with hydrogen migration at elevated temperatures, becomes the main degradation mechanism of concern for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during each of the fabrication process is, therefore, of great interest to the understanding of device reliability. In the current study, various low-k dielectric films were subjected to thermal annealing in N2 ambient at temperatures that are generally used for device fabrication. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA) were used to investigate composition change and hydrogen redistribution of the dielectric films. The results indicate that organosilicate glass, silicon nitride and silicon oxynitride films were stable at temperatures up to 500 °C. In phosphorus doped silicon glass and plasma-enhanced tetraethylorthosilicate films, significant hydrogen release from the surface region was evident after heat treatment in N2 purged environment at 300 °C for 30 min, further hydrogen release is observed as temperature increases.

Original languageEnglish
Pages (from-to)335-338
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2006
Externally publishedYes

Fingerprint

Dielectric films
Ion beams
Hydrogen
ion beams
hydrogen
Silicon
temperature
Fabrication
Glass
Temperature
fabrication
glass
oxynitrides
Rutherford backscattering spectroscopy
silicon
Semiconductor devices
Silicon nitride
semiconductor devices
silicon nitrides
Phosphorus

Keywords

  • Elastic recoil detection analysis
  • Low-k dielectric films
  • Rutherford backscattering spectroscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Study of hydrogen stability in low-k dielectric films by ion beam techniques. / Zhang, Y.; Saraf, L.; Shutthanandan, V.; Hughes, K. D.; Kuan, R.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 335-338.

Research output: Contribution to journalArticle

Zhang, Y. ; Saraf, L. ; Shutthanandan, V. ; Hughes, K. D. ; Kuan, R. ; Thevuthasan, S. / Study of hydrogen stability in low-k dielectric films by ion beam techniques. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 335-338.
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AU - Thevuthasan, S.

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