Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts = 25-800 °C). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS), and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure, and morphology of Ga2O 3 films. XRD and SEM analyses indicate that the Ga2O 3 films grown at lower temperatures were amorphous, while those grown at Ts ≥ 500 °C were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts = 300-800 °C. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 to 5.17 eV for a variation in Ts in the range 25-800 °C. A relationship between microstructure and optical property is discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films