Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation

A. Ennaoui, K. Diesner, S. Fiechter, J. H. Moser, F. Lévy

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Tungsten disulfide thin films were prepared by sulfurization of < 500 nm thick WO3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron microscopy (SEM). From XRD patterns, it was concluded that the layers consisted of crystallites of the hexagonal 2H-WS2 phase and distinguished by a high degree of texture with the hexagonal (001) faces oriented parallel to the substrate. However, analysis of the films by cross-section TEM revealed that only the top layers of the films exhibited (001) texture while in the portion of the layer beneath the hexagonal crystallites were upright standing forming an angle with the substrate and the top layer of about 72°. Convergent beam electron diffraction (CBD) studies performed along [100] indicated stacking faults of the 001 layers. In accord with XRD measurements, selected area diffraction (SAD) patterns gave no evidence of unreacted WO3 even after short sulfurization times of 30 min.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalThin Solid Films
Volume311
Issue number1-2
Publication statusPublished - 31 Dec 1997
Externally publishedYes

Fingerprint

structural analysis
Structural analysis
Transmission electron microscopy
Crystallites
X rays
Thin films
transmission electron microscopy
Substrates
thin films
Textures
Tungsten
x rays
Stacking faults
Silicon
Electron diffraction
Disulfides
Diffraction patterns
crystallites
textures
X ray diffraction

Keywords

  • Growth mechanism
  • Transmission electron microscopy (TEM)
  • Tungsten oxide
  • X-ray diffraction

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ennaoui, A., Diesner, K., Fiechter, S., Moser, J. H., & Lévy, F. (1997). Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation. Thin Solid Films, 311(1-2), 146-150.

Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation. / Ennaoui, A.; Diesner, K.; Fiechter, S.; Moser, J. H.; Lévy, F.

In: Thin Solid Films, Vol. 311, No. 1-2, 31.12.1997, p. 146-150.

Research output: Contribution to journalArticle

Ennaoui, A, Diesner, K, Fiechter, S, Moser, JH & Lévy, F 1997, 'Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation', Thin Solid Films, vol. 311, no. 1-2, pp. 146-150.
Ennaoui A, Diesner K, Fiechter S, Moser JH, Lévy F. Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation. Thin Solid Films. 1997 Dec 31;311(1-2):146-150.
Ennaoui, A. ; Diesner, K. ; Fiechter, S. ; Moser, J. H. ; Lévy, F. / Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation. In: Thin Solid Films. 1997 ; Vol. 311, No. 1-2. pp. 146-150.
@article{8e20d781d74c4008a3260b58e4cda544,
title = "Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation",
abstract = "Tungsten disulfide thin films were prepared by sulfurization of < 500 nm thick WO3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron microscopy (SEM). From XRD patterns, it was concluded that the layers consisted of crystallites of the hexagonal 2H-WS2 phase and distinguished by a high degree of texture with the hexagonal (001) faces oriented parallel to the substrate. However, analysis of the films by cross-section TEM revealed that only the top layers of the films exhibited (001) texture while in the portion of the layer beneath the hexagonal crystallites were upright standing forming an angle with the substrate and the top layer of about 72°. Convergent beam electron diffraction (CBD) studies performed along [100] indicated stacking faults of the 001 layers. In accord with XRD measurements, selected area diffraction (SAD) patterns gave no evidence of unreacted WO3 even after short sulfurization times of 30 min.",
keywords = "Growth mechanism, Transmission electron microscopy (TEM), Tungsten oxide, X-ray diffraction",
author = "A. Ennaoui and K. Diesner and S. Fiechter and Moser, {J. H.} and F. L{\'e}vy",
year = "1997",
month = "12",
day = "31",
language = "English",
volume = "311",
pages = "146--150",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation

AU - Ennaoui, A.

AU - Diesner, K.

AU - Fiechter, S.

AU - Moser, J. H.

AU - Lévy, F.

PY - 1997/12/31

Y1 - 1997/12/31

N2 - Tungsten disulfide thin films were prepared by sulfurization of < 500 nm thick WO3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron microscopy (SEM). From XRD patterns, it was concluded that the layers consisted of crystallites of the hexagonal 2H-WS2 phase and distinguished by a high degree of texture with the hexagonal (001) faces oriented parallel to the substrate. However, analysis of the films by cross-section TEM revealed that only the top layers of the films exhibited (001) texture while in the portion of the layer beneath the hexagonal crystallites were upright standing forming an angle with the substrate and the top layer of about 72°. Convergent beam electron diffraction (CBD) studies performed along [100] indicated stacking faults of the 001 layers. In accord with XRD measurements, selected area diffraction (SAD) patterns gave no evidence of unreacted WO3 even after short sulfurization times of 30 min.

AB - Tungsten disulfide thin films were prepared by sulfurization of < 500 nm thick WO3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron microscopy (SEM). From XRD patterns, it was concluded that the layers consisted of crystallites of the hexagonal 2H-WS2 phase and distinguished by a high degree of texture with the hexagonal (001) faces oriented parallel to the substrate. However, analysis of the films by cross-section TEM revealed that only the top layers of the films exhibited (001) texture while in the portion of the layer beneath the hexagonal crystallites were upright standing forming an angle with the substrate and the top layer of about 72°. Convergent beam electron diffraction (CBD) studies performed along [100] indicated stacking faults of the 001 layers. In accord with XRD measurements, selected area diffraction (SAD) patterns gave no evidence of unreacted WO3 even after short sulfurization times of 30 min.

KW - Growth mechanism

KW - Transmission electron microscopy (TEM)

KW - Tungsten oxide

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0031387018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031387018&partnerID=8YFLogxK

M3 - Article

VL - 311

SP - 146

EP - 150

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -