Structural analysis of 2H-WS2 thin films by X-ray and TEM investigation

A. Ennaoui, K. Diesner, S. Fiechter, J. H. Moser, F. Lévy

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Abstract

Tungsten disulfide thin films were prepared by sulfurization of < 500 nm thick WO3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron microscopy (SEM). From XRD patterns, it was concluded that the layers consisted of crystallites of the hexagonal 2H-WS2 phase and distinguished by a high degree of texture with the hexagonal (001) faces oriented parallel to the substrate. However, analysis of the films by cross-section TEM revealed that only the top layers of the films exhibited (001) texture while in the portion of the layer beneath the hexagonal crystallites were upright standing forming an angle with the substrate and the top layer of about 72°. Convergent beam electron diffraction (CBD) studies performed along [100] indicated stacking faults of the 001 layers. In accord with XRD measurements, selected area diffraction (SAD) patterns gave no evidence of unreacted WO3 even after short sulfurization times of 30 min.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalThin Solid Films
Volume311
Issue number1-2
DOIs
Publication statusPublished - 31 Dec 1997

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Keywords

  • Growth mechanism
  • Transmission electron microscopy (TEM)
  • Tungsten oxide
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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