Stress engineering in amorphous silicon thin films

Eric Johlin, Sebastián Castro-Galnares, Amir Abdallah, Nouar Tabet, Mariana I. Bertoni, Tesleem Asafa, Jeffrey C. Grossman, Said Sayed, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low hole mobility severely limits the conversion efficiencies of amorphous silicon (a-Si) solar cells. Previously it has been proposed that carrier mobility can be improved by introducing certain types of stress into thin films. In this work we explore a range of deposition conditions allowing the formation of intrinsic stresses varying from -924 MPa compressive to 386 MPa tensile. We then discuss the origins of these stresses due to ion bombardment, presenting a model correlating our deposition parameters with our observed stress measurements. In doing so we elucidate the non-linear relationship between deposition pressure and the films intrinsic stress.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages176-178
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/6/1124/6/11

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Johlin, E., Castro-Galnares, S., Abdallah, A., Tabet, N., Bertoni, M. I., Asafa, T., Grossman, J. C., Sayed, S., & Buonassisi, T. (2011). Stress engineering in amorphous silicon thin films. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 176-178). [6185874] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6185874