STM studies of 1-D noble metal growth on silicon

A. A. Baski, K. M. Jones, Khaled Saoud

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Our scanning tunneling microscopy (STM) studies show that noble metals (Ag, Au) form a wide variety of 1-D structures on the high-index Si(5512) surface. At coverages below 0.25 monolayer (ML), both metals grow as overlayer rows with an inter-row spacing of ∼5nm. At higher coverages and annealing temperatures, the underlying Si reconstruction is removed, but periodic row structures persist. Au can also induce faceting to nearby planes, e.g. (7715) and (225), at temperatures above 500°C. For all coverages and annealing temperatures studied here (0.02-1ML, 450-800°C), the Si(5512) template initiates 1-D growth of the deposited noble metals.

Original languageEnglish
Pages (from-to)23-30
Number of pages8
JournalUltramicroscopy
Volume86
Issue number1-2
DOIs
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
Silicon
Precious metals
noble metals
scanning tunneling microscopy
silicon
Annealing
annealing
Periodic structures
Temperature
temperature
Monolayers
templates
Metals
spacing
metals

Keywords

  • 1-D growth
  • High-index surfaces
  • Noble metal
  • Silicon
  • STM

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

STM studies of 1-D noble metal growth on silicon. / Baski, A. A.; Jones, K. M.; Saoud, Khaled.

In: Ultramicroscopy, Vol. 86, No. 1-2, 2001, p. 23-30.

Research output: Contribution to journalArticle

Baski, A. A. ; Jones, K. M. ; Saoud, Khaled. / STM studies of 1-D noble metal growth on silicon. In: Ultramicroscopy. 2001 ; Vol. 86, No. 1-2. pp. 23-30.
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