STM studies of 1-D noble metal growth on silicon

A. A. Baski, K. M. Jones, K. M. Saoud

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Our scanning tunneling microscopy (STM) studies show that noble metals (Ag, Au) form a wide variety of 1-D structures on the high-index Si(5512) surface. At coverages below 0.25 monolayer (ML), both metals grow as overlayer rows with an inter-row spacing of ∼5nm. At higher coverages and annealing temperatures, the underlying Si reconstruction is removed, but periodic row structures persist. Au can also induce faceting to nearby planes, e.g. (7715) and (225), at temperatures above 500°C. For all coverages and annealing temperatures studied here (0.02-1ML, 450-800°C), the Si(5512) template initiates 1-D growth of the deposited noble metals.

Original languageEnglish
Pages (from-to)23-30
Number of pages8
JournalUltramicroscopy
Volume86
Issue number1-2
DOIs
Publication statusPublished - 6 Feb 2001

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Keywords

  • 1-D growth
  • High-index surfaces
  • Noble metal
  • STM
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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