Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers

Y. Jiang, R. Pasternak, Z. Marka, Y. V. Shirokaya, J. K. Miller, Sergey Rashkeev, Yu D. Glinka, I. E. Perakis, P. K. Roy, J. Kozub, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, X. Liu, Y. Sasaki, J. K. Furdyna, N. H. Tolk

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Abstract

We review recent advances in spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultrafast lasers, involving (a) carrier dynamics at Si/SiO2 interfaces with different oxide thicknesses, (b) radiation enhanced electron transport in ultra-thin oxides, and (c) ultrafast spin dynamics in semiconductor heterostructures, probed by second-harmonic generation (SHG).

Original languageEnglish
Pages (from-to)490-499
Number of pages10
JournalPhysica Status Solidi (B) Basic Research
Volume240
Issue number3
DOIs
Publication statusPublished - 1 Dec 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, Y., Pasternak, R., Marka, Z., Shirokaya, Y. V., Miller, J. K., Rashkeev, S., Glinka, Y. D., Perakis, I. E., Roy, P. K., Kozub, J., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Liu, X., Sasaki, Y., Furdyna, J. K., & Tolk, N. H. (2003). Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers. Physica Status Solidi (B) Basic Research, 240(3), 490-499. https://doi.org/10.1002/pssb.200303861