Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate

How do they modify the interface?

Sergey Rashkeev, K. Van Benthem, S. T. Pantelides, S. J. Pennycook

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We show that individual Hf atoms may get incorporated into the SiO 2 interlayer which is formed between the HfO2 dielectric film and the Si substrate during rapid thermal annealing. We report atomically-resolved Z-contrast images of a Si/SiO2/HfO2 structure together with first-principles calculations which demonstrate that single Hf atoms are in fact present in the interlayer. The location of individual Hf atoms within the interlayer oxide is closely related to the structure of the amorphous oxide near the Si/SiO2 interface. The Hf defects may affect channel mobility and leakage currents in the HfO 2/Si electronic devices.

Original languageEnglish
Pages (from-to)416-419
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
Publication statusPublished - 17 Jun 2005
Externally publishedYes

Fingerprint

Dielectric films
interlayers
Atoms
Oxides
Substrates
atoms
oxides
Rapid thermal annealing
image contrast
Leakage currents
leakage
Defects
annealing
defects
electronics

Keywords

  • Alternative dielectrics
  • Hafnium oxide
  • Leakage current
  • Scanning transmission electron microscopy

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate : How do they modify the interface? / Rashkeev, Sergey; Van Benthem, K.; Pantelides, S. T.; Pennycook, S. J.

In: Microelectronic Engineering, Vol. 80, No. SUPPL., 17.06.2005, p. 416-419.

Research output: Contribution to journalArticle

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