Single-artificial-atom lasing using a voltage-biased superconducting charge qubit

Sahel Ashhab, J. R. Johansson, A. M. Zagoskin, Franco Nori

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We consider a system composed of a single artificial atom coupled to a cavity mode. The artificial atom is biased such that the most dominant relaxation process in the system takes the atom from its ground state to its excited state, thus ensuring population inversion. A recent experimental manifestation of this situation was achieved using a voltage-biased superconducting charge qubit. Even under the condition of 'inverted relaxation', lasing action can be suppressed if the 'relaxation' rate is larger than a certain threshold value. Using simple transition-rate arguments and a semiclassical calculation, we derive analytic expressions for the lasing suppression condition and the state of the cavity in both the lasing and suppressed-lasing regimes. The results of numerical calculations agree very well with the analytically derived results. We start by analyzing a simplified two-level-atom model, and we then analyze a three-level-atom model that should describe accurately the recently realized superconducting artificialatom laser.

Original languageEnglish
Article number023030
JournalNew Journal of Physics
Volume11
DOIs
Publication statusPublished - 17 Feb 2009
Externally publishedYes

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lasing
electric potential
atoms
cavities
population inversion
retarding
ground state
thresholds
excitation
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Single-artificial-atom lasing using a voltage-biased superconducting charge qubit. / Ashhab, Sahel; Johansson, J. R.; Zagoskin, A. M.; Nori, Franco.

In: New Journal of Physics, Vol. 11, 023030, 17.02.2009.

Research output: Contribution to journalArticle

Ashhab, Sahel ; Johansson, J. R. ; Zagoskin, A. M. ; Nori, Franco. / Single-artificial-atom lasing using a voltage-biased superconducting charge qubit. In: New Journal of Physics. 2009 ; Vol. 11.
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