Silicon surface states and subsurface hydrogen

Abdelhak Belaidi, J. N. Chazalviel, F. Ozanam, O. Gorochov, A. Chari, B. Fotouhi, M. Etman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The n-Si|fluoride electrolyte interface exhibits a small interface-state density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of an anodically formed oxide, a quasi ideal interface with a very low interface-state density was obtained. At open-circuit potential, a slow increase in the interface-state density was observed. These interface states result from the penetration of hydrogen into the silicon subsurface region. The inward diffusion of hydrogen produced by electrochemical etching of silicon accounts for the large time constant observed.

Original languageEnglish
Pages (from-to)55-60
Number of pages6
JournalJournal of Electroanalytical Chemistry
Volume444
Issue number1
Publication statusPublished - 5 Mar 1998
Externally publishedYes

Fingerprint

Interface states
Surface states
Silicon
Hydrogen
Capacitance
Electrochemical etching
Fluorides
Oxides
Electrolytes
Dissolution
Networks (circuits)

Keywords

  • Capacitance-potential curves
  • Hydrogen
  • Interface-state density
  • Silicon subsurface region

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Belaidi, A., Chazalviel, J. N., Ozanam, F., Gorochov, O., Chari, A., Fotouhi, B., & Etman, M. (1998). Silicon surface states and subsurface hydrogen. Journal of Electroanalytical Chemistry, 444(1), 55-60.

Silicon surface states and subsurface hydrogen. / Belaidi, Abdelhak; Chazalviel, J. N.; Ozanam, F.; Gorochov, O.; Chari, A.; Fotouhi, B.; Etman, M.

In: Journal of Electroanalytical Chemistry, Vol. 444, No. 1, 05.03.1998, p. 55-60.

Research output: Contribution to journalArticle

Belaidi, A, Chazalviel, JN, Ozanam, F, Gorochov, O, Chari, A, Fotouhi, B & Etman, M 1998, 'Silicon surface states and subsurface hydrogen', Journal of Electroanalytical Chemistry, vol. 444, no. 1, pp. 55-60.
Belaidi A, Chazalviel JN, Ozanam F, Gorochov O, Chari A, Fotouhi B et al. Silicon surface states and subsurface hydrogen. Journal of Electroanalytical Chemistry. 1998 Mar 5;444(1):55-60.
Belaidi, Abdelhak ; Chazalviel, J. N. ; Ozanam, F. ; Gorochov, O. ; Chari, A. ; Fotouhi, B. ; Etman, M. / Silicon surface states and subsurface hydrogen. In: Journal of Electroanalytical Chemistry. 1998 ; Vol. 444, No. 1. pp. 55-60.
@article{265df6dd1e104c9196a58c72a8919278,
title = "Silicon surface states and subsurface hydrogen",
abstract = "The n-Si|fluoride electrolyte interface exhibits a small interface-state density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of an anodically formed oxide, a quasi ideal interface with a very low interface-state density was obtained. At open-circuit potential, a slow increase in the interface-state density was observed. These interface states result from the penetration of hydrogen into the silicon subsurface region. The inward diffusion of hydrogen produced by electrochemical etching of silicon accounts for the large time constant observed.",
keywords = "Capacitance-potential curves, Hydrogen, Interface-state density, Silicon subsurface region",
author = "Abdelhak Belaidi and Chazalviel, {J. N.} and F. Ozanam and O. Gorochov and A. Chari and B. Fotouhi and M. Etman",
year = "1998",
month = "3",
day = "5",
language = "English",
volume = "444",
pages = "55--60",
journal = "Journal of Electroanalytical Chemistry",
issn = "0022-0728",
publisher = "Elsevier Sequoia",
number = "1",

}

TY - JOUR

T1 - Silicon surface states and subsurface hydrogen

AU - Belaidi, Abdelhak

AU - Chazalviel, J. N.

AU - Ozanam, F.

AU - Gorochov, O.

AU - Chari, A.

AU - Fotouhi, B.

AU - Etman, M.

PY - 1998/3/5

Y1 - 1998/3/5

N2 - The n-Si|fluoride electrolyte interface exhibits a small interface-state density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of an anodically formed oxide, a quasi ideal interface with a very low interface-state density was obtained. At open-circuit potential, a slow increase in the interface-state density was observed. These interface states result from the penetration of hydrogen into the silicon subsurface region. The inward diffusion of hydrogen produced by electrochemical etching of silicon accounts for the large time constant observed.

AB - The n-Si|fluoride electrolyte interface exhibits a small interface-state density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of an anodically formed oxide, a quasi ideal interface with a very low interface-state density was obtained. At open-circuit potential, a slow increase in the interface-state density was observed. These interface states result from the penetration of hydrogen into the silicon subsurface region. The inward diffusion of hydrogen produced by electrochemical etching of silicon accounts for the large time constant observed.

KW - Capacitance-potential curves

KW - Hydrogen

KW - Interface-state density

KW - Silicon subsurface region

UR - http://www.scopus.com/inward/record.url?scp=0032485163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032485163&partnerID=8YFLogxK

M3 - Article

VL - 444

SP - 55

EP - 60

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

SN - 0022-0728

IS - 1

ER -