Silicon surface states and subsurface hydrogen

Abdelhak Belaidi, J. N. Chazalviel, F. Ozanam, O. Gorochov, A. Chari, B. Fotouhi, M. Etman

Research output: Contribution to journalArticle

21 Citations (Scopus)


The n-Si|fluoride electrolyte interface exhibits a small interface-state density, as shown by the presence of a weak capacitance peak in the capacitance-potential curves. After in situ chemical dissolution of an anodically formed oxide, a quasi ideal interface with a very low interface-state density was obtained. At open-circuit potential, a slow increase in the interface-state density was observed. These interface states result from the penetration of hydrogen into the silicon subsurface region. The inward diffusion of hydrogen produced by electrochemical etching of silicon accounts for the large time constant observed.

Original languageEnglish
Pages (from-to)55-60
Number of pages6
JournalJournal of Electroanalytical Chemistry
Issue number1
Publication statusPublished - 5 Mar 1998
Externally publishedYes



  • Capacitance-potential curves
  • Hydrogen
  • Interface-state density
  • Silicon subsurface region

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Belaidi, A., Chazalviel, J. N., Ozanam, F., Gorochov, O., Chari, A., Fotouhi, B., & Etman, M. (1998). Silicon surface states and subsurface hydrogen. Journal of Electroanalytical Chemistry, 444(1), 55-60.