Signatures of Ge 2Sb 2Te 5 film at structural transitions

Vinod Madhavan, Ramakanta Naik, R. Ganesan, K. S. Sangunni

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ge 2Sb 2Te 5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access Memory applications are studied for changes in sheet resistance, optical transmission, morphology and surface science by annealing at various transition temperatures. The crystallization leads to an increase of grain size and roughness in the films and the resistance changes to three orders of magnitude. Optical studies on GST films show distinct changes during phase transitions and the optical parameters are calculated. An increase of Tauc parameters B 1/2 indicates a reduction in disorder during phase transition. It is confirmed from XPS studies that Ge-Te, Sb-Te bonds are present in both amorphous and crystalline phases whereas Sb-Ge, Te-Te, Sb-Sb bonds are absent.

Original languageEnglish
Pages (from-to)2927-2930
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume358
Issue number21
DOIs
Publication statusPublished - 15 Oct 2012
Externally publishedYes

Fingerprint

signatures
Phase transitions
Sheet resistance
random access memory
Light transmission
Crystallization
Superconducting transition temperature
roughness
X ray photoelectron spectroscopy
grain size
Surface roughness
transition temperature
disorders
Annealing
crystallization
Crystalline materials
Data storage equipment
annealing

Keywords

  • GST
  • Optical band gap
  • Phase change materials
  • XPS
  • XRD

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Signatures of Ge 2Sb 2Te 5 film at structural transitions. / Madhavan, Vinod; Naik, Ramakanta; Ganesan, R.; Sangunni, K. S.

In: Journal of Non-Crystalline Solids, Vol. 358, No. 21, 15.10.2012, p. 2927-2930.

Research output: Contribution to journalArticle

Madhavan, Vinod ; Naik, Ramakanta ; Ganesan, R. ; Sangunni, K. S. / Signatures of Ge 2Sb 2Te 5 film at structural transitions. In: Journal of Non-Crystalline Solids. 2012 ; Vol. 358, No. 21. pp. 2927-2930.
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