SiC power devices and applications in quasi-Z-source converters/inverters

Maoxing Li, Haitham Abu-Rub, Yushan Liu, Baoming Ge, Zainal Salam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.

Original languageEnglish
Title of host publication2015 IEEE Conference on Energy Conversion, CENCON 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages331-336
Number of pages6
ISBN (Electronic)9781479985982
DOIs
Publication statusPublished - 16 Feb 2016
Event2nd IEEE Conference on Energy Conversion, CENCON 2015 - Johor Bahru, Malaysia
Duration: 19 Oct 201520 Oct 2015

Other

Other2nd IEEE Conference on Energy Conversion, CENCON 2015
CountryMalaysia
CityJohor Bahru
Period19/10/1520/10/15

Fingerprint

Silicon carbide
Power electronics
Silicon
Insulated gate bipolar transistors (IGBT)
Switching frequency
Energy gap
Electric potential
Temperature
Matrix converters
Power semiconductor devices

Keywords

  • impedance source
  • inverter
  • matrix converter
  • power loss
  • Silicon carbide

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Li, M., Abu-Rub, H., Liu, Y., Ge, B., & Salam, Z. (2016). SiC power devices and applications in quasi-Z-source converters/inverters. In 2015 IEEE Conference on Energy Conversion, CENCON 2015 (pp. 331-336). [7409564] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CENCON.2015.7409564

SiC power devices and applications in quasi-Z-source converters/inverters. / Li, Maoxing; Abu-Rub, Haitham; Liu, Yushan; Ge, Baoming; Salam, Zainal.

2015 IEEE Conference on Energy Conversion, CENCON 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 331-336 7409564.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, M, Abu-Rub, H, Liu, Y, Ge, B & Salam, Z 2016, SiC power devices and applications in quasi-Z-source converters/inverters. in 2015 IEEE Conference on Energy Conversion, CENCON 2015., 7409564, Institute of Electrical and Electronics Engineers Inc., pp. 331-336, 2nd IEEE Conference on Energy Conversion, CENCON 2015, Johor Bahru, Malaysia, 19/10/15. https://doi.org/10.1109/CENCON.2015.7409564
Li M, Abu-Rub H, Liu Y, Ge B, Salam Z. SiC power devices and applications in quasi-Z-source converters/inverters. In 2015 IEEE Conference on Energy Conversion, CENCON 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 331-336. 7409564 https://doi.org/10.1109/CENCON.2015.7409564
Li, Maoxing ; Abu-Rub, Haitham ; Liu, Yushan ; Ge, Baoming ; Salam, Zainal. / SiC power devices and applications in quasi-Z-source converters/inverters. 2015 IEEE Conference on Energy Conversion, CENCON 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 331-336
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