Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X-ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

C. Sarrieu, N. Barth, A. Guise, J. C. Arnault, S. Saada, S. Barrat, E. Bauer-Grosse

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Diamond synthesis by microwave plasma assisted chemical vapour deposition (MPCVD) with a bias enhanced nucleation (BEN) step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection highenergy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) investigations enabled us to highlight the formation of amorphous carbon and crystalline silicon carbide on the surface before diamond growth. By varying the bias voltage, we underlined an optimized value corresponding to a higher quantity of amorphous carbon. This quantity is strongly correlated to the diamond nucleation density. As for the quality of the SiC texture, this seems to be directly linked to bias voltage too: low bias voltages enable us to obtain high oriented 3C-SiC whereas high bias voltages lead to a completely misoriented polycrystalline SiC film.

Original languageEnglish
Pages (from-to)1967-1971
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume206
Issue number9
DOIs
Publication statusPublished - 1 Sep 2009

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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