Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, D. E. McCready

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Single-crystal 6H-SiC (α-SiC) wafers were irradiated with He+, C+ and Si+ ions to fluences ranging from 7.5×1017 to 1×1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He+ Rutherford backscattering spectrometry combined with ion channeling (RBS/C) methods. The defect concentration at the damage peak is observed to increase sigmoidally with increasing ion fluence during irradiation at low temperatures. The isochronal recovery of irradiation damage induced at low temperatures is observed to follow an exponential dependence on temperature. The relative disorder accumulated under 550 keV C+ ion irradiation as a function of irradiation temperature exhibits a significant decrease between 300 K and 670 K. Irradiation with 550 keV Si+ at 180 K to a fluence of 6.0×1019 Si+ m-2 produces an amorphous layer extending from the surface to a depth of 0.6 μm. The thickness of this amorphous layer decreases linearly with annealing temperature up to 870 K. At low ion fluences, the defects produced by He+ irradiation at 160 K are more difficult to anneal at 300 K than those produced by Si+ irradiation, which suggests that trapping of helium may inhibit recombination.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalSurface and Interface Analysis
Volume27
Issue number4
DOIs
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Rutherford backscattering spectroscopy
Spectrometry
backscattering
Irradiation
Ions
irradiation
fluence
spectroscopy
ions
damage
Temperature
Defects
defects
Annealing
Helium
annealing
temperature
Ion bombardment
ion irradiation
recovery

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E.

In: Surface and Interface Analysis, Vol. 27, No. 4, 1999, p. 179-184.

Research output: Contribution to journalArticle

Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; McCready, D. E. / Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC. In: Surface and Interface Analysis. 1999 ; Vol. 27, No. 4. pp. 179-184.
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