Rutherford backscattering and channeling studies of a TiO2(100) substrate, epitaxially grown pure and Nb-doped TiO2 films

S. Thevuthasan, N. R. Shivaparan, R. J. Smith, Y. Gao, S. A. Chambers

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Abstract

We have investigated the crystalline quality of a TiO2(100) substrate, homoepitaxially grown TiO2 film and Nb-doped TiO2 films using Rutherford backscattering (RBS) and channeling experiments. The minimum yields obtained from the aligned and random spectra are 2.4 ± 0.2% for the TiO2(100) substrate, and 4.0 ± 0.2% for a homoepitaxial TiO2 film. The minimum yields for Ti and Nb are 1.6 ± 0.2% and 7.0 ± 1.0%, respectively, for a Nb-doped TiO2 film. Also, about 95% of the Nb atoms occupy cation sites in the Nb-doped TiO2 film. The angular yield curves for Ti and Nb from the Nb-doped film confirm the good crystalline quality of the film in which most Nb atoms occupy the cation sites. The calculated surface peak areas for Ti and Nb using a model which incorporates Nb surface segregation from the bulk, agree very well with the corresponding surface peak areas for Ti and Nb extracted from the experiment.

Original languageEnglish
Pages (from-to)381-385
Number of pages5
JournalApplied Surface Science
Volume115
Issue number4
Publication statusPublished - Aug 1997
Externally publishedYes

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Thevuthasan, S., Shivaparan, N. R., Smith, R. J., Gao, Y., & Chambers, S. A. (1997). Rutherford backscattering and channeling studies of a TiO2(100) substrate, epitaxially grown pure and Nb-doped TiO2 films. Applied Surface Science, 115(4), 381-385.