Abstract
A CMOS gas-sensitive field-effect transistor (Gas-FET) is proposed for noninvasive diabetes detection. The Gas-FET was fabricated in the GlobalFoundries 0.18μm 1P6M process with a lateral control gate and a floating gate to set operating point and gas sensing sensitivity, respectively. ZnO nanorods were used as the sensing material and deposited on top of the chip using a hydrothermal process at 80°C. Room-temperature acetone sensing down to sub-ppm level is demonstrated to enable noninvasive diagnosis of diabetes in exhaled breath. A dual-mode integrated readout circuit is also proposed to improve the sensor gas discrimination ability through the acquisition of 2-dimensional information by every single Gas-FET sensor.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2018-May |
| ISBN (Electronic) | 9781538648810 |
| DOIs | |
| Publication status | Published - 26 Apr 2018 |
| Event | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy Duration: 27 May 2018 → 30 May 2018 |
Other
| Other | 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 |
|---|---|
| Country | Italy |
| City | Florence |
| Period | 27/5/18 → 30/5/18 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Room-Temperature Dual-mode CMOS Gas-FET Sensor for Diabetes Detection. / Yu, Qian; Boussaid, Farid; Bermak, Amine; Tsui, Chi Ying.
2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings. Vol. 2018-May Institute of Electrical and Electronics Engineers Inc., 2018. 8351086.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Room-Temperature Dual-mode CMOS Gas-FET Sensor for Diabetes Detection
AU - Yu, Qian
AU - Boussaid, Farid
AU - Bermak, Amine
AU - Tsui, Chi Ying
PY - 2018/4/26
Y1 - 2018/4/26
N2 - A CMOS gas-sensitive field-effect transistor (Gas-FET) is proposed for noninvasive diabetes detection. The Gas-FET was fabricated in the GlobalFoundries 0.18μm 1P6M process with a lateral control gate and a floating gate to set operating point and gas sensing sensitivity, respectively. ZnO nanorods were used as the sensing material and deposited on top of the chip using a hydrothermal process at 80°C. Room-temperature acetone sensing down to sub-ppm level is demonstrated to enable noninvasive diagnosis of diabetes in exhaled breath. A dual-mode integrated readout circuit is also proposed to improve the sensor gas discrimination ability through the acquisition of 2-dimensional information by every single Gas-FET sensor.
AB - A CMOS gas-sensitive field-effect transistor (Gas-FET) is proposed for noninvasive diabetes detection. The Gas-FET was fabricated in the GlobalFoundries 0.18μm 1P6M process with a lateral control gate and a floating gate to set operating point and gas sensing sensitivity, respectively. ZnO nanorods were used as the sensing material and deposited on top of the chip using a hydrothermal process at 80°C. Room-temperature acetone sensing down to sub-ppm level is demonstrated to enable noninvasive diagnosis of diabetes in exhaled breath. A dual-mode integrated readout circuit is also proposed to improve the sensor gas discrimination ability through the acquisition of 2-dimensional information by every single Gas-FET sensor.
UR - http://www.scopus.com/inward/record.url?scp=85057135349&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057135349&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2018.8351086
DO - 10.1109/ISCAS.2018.8351086
M3 - Conference contribution
AN - SCOPUS:85057135349
VL - 2018-May
BT - 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -