The large Stokes shift of the NBO defect in α-SiO2 was studied and found to be entirely due to slow nonradiative electronic relaxations. Another defect (OH group) exhibited a similar Stokes shift that consist of a mix of lattice and electronic relaxations resulting in site-dependent luminescence energies ranging from 1.8 to 0.7 eV.
|Journal||Physical Review Letters|
|Publication status||Published - 28 Nov 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)