Abstract
The large Stokes shift of the NBO defect in α-SiO2 was studied and found to be entirely due to slow nonradiative electronic relaxations. Another defect (OH group) exhibited a similar Stokes shift that consist of a mix of lattice and electronic relaxations resulting in site-dependent luminescence energies ranging from 1.8 to 0.7 eV.
| Original language | English |
|---|---|
| Journal | Physical Review Letters |
| Volume | 91 |
| Issue number | 22 |
| Publication status | Published - 28 Nov 2003 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Role of electronic versus atomic relaxations in Stokes shifts at defects in solids. / Bakos, T.; Rashkeev, Sergey; Pantelides, S. T.
In: Physical Review Letters, Vol. 91, No. 22, 28.11.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Role of electronic versus atomic relaxations in Stokes shifts at defects in solids
AU - Bakos, T.
AU - Rashkeev, Sergey
AU - Pantelides, S. T.
PY - 2003/11/28
Y1 - 2003/11/28
N2 - The large Stokes shift of the NBO defect in α-SiO2 was studied and found to be entirely due to slow nonradiative electronic relaxations. Another defect (OH group) exhibited a similar Stokes shift that consist of a mix of lattice and electronic relaxations resulting in site-dependent luminescence energies ranging from 1.8 to 0.7 eV.
AB - The large Stokes shift of the NBO defect in α-SiO2 was studied and found to be entirely due to slow nonradiative electronic relaxations. Another defect (OH group) exhibited a similar Stokes shift that consist of a mix of lattice and electronic relaxations resulting in site-dependent luminescence energies ranging from 1.8 to 0.7 eV.
UR - http://www.scopus.com/inward/record.url?scp=0346688984&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0346688984&partnerID=8YFLogxK
M3 - Article
VL - 91
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 22
ER -