Role of electronic versus atomic relaxations in Stokes shifts at defects in solids

T. Bakos, Sergey Rashkeev, S. T. Pantelides

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The large Stokes shift of the NBO defect in α-SiO2 was studied and found to be entirely due to slow nonradiative electronic relaxations. Another defect (OH group) exhibited a similar Stokes shift that consist of a mix of lattice and electronic relaxations resulting in site-dependent luminescence energies ranging from 1.8 to 0.7 eV.

Original languageEnglish
JournalPhysical Review Letters
Volume91
Issue number22
Publication statusPublished - 28 Nov 2003
Externally publishedYes

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Luminescence
shift
defects
electronics
luminescence
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Role of electronic versus atomic relaxations in Stokes shifts at defects in solids. / Bakos, T.; Rashkeev, Sergey; Pantelides, S. T.

In: Physical Review Letters, Vol. 91, No. 22, 28.11.2003.

Research output: Contribution to journalArticle

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