Robust intermediate read-out for deep submicron technology CMOS image sensors

Chen Shoushun, Farid Boussaid, Amine Bermak

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

In this paper, a CMOS image sensor featuring a novel spiking pixel design and a robust digital intermediate read-out is proposed for deep submicron CMOS technologies. The proposed read-out scheme exhibits a relative insensitivity to the ongoing aggressive scaling of the supply voltage. It is based on a novel compact spiking pixel circuit, which combines digitizing and memory functions. Illumination is encoded into a Gray code using a very simple yet robust Gray 8-bit counter memory. Circuit simulations and experiments demonstrate the successful operation of a 64 × 64 image sensor, implemented in a 0.35 μm CMOS technology. A scalability analysis is presented. It suggests that deep sub-0.18 μm will enable the full potential of the proposed Gray encoding spiking pixel. Potential applications include multiresolution imaging and motion detection.

Original languageEnglish
Article number912783
Pages (from-to)286-294
Number of pages9
JournalIEEE Sensors Journal
Volume8
Issue number3
DOIs
Publication statusPublished - Mar 2008
Externally publishedYes

Fingerprint

spiking
Image sensors
CMOS
Pixels
pixels
sensors
Data storage equipment
Circuit simulation
Scalability
coding
counters
Lighting
illumination
Imaging techniques
scaling
Networks (circuits)
sensitivity
Electric potential
electric potential
simulation

Keywords

  • Cmos image sensor
  • Intermediate read-out
  • Scalability
  • Spiking pixel

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Robust intermediate read-out for deep submicron technology CMOS image sensors. / Shoushun, Chen; Boussaid, Farid; Bermak, Amine.

In: IEEE Sensors Journal, Vol. 8, No. 3, 912783, 03.2008, p. 286-294.

Research output: Contribution to journalArticle

Shoushun, Chen ; Boussaid, Farid ; Bermak, Amine. / Robust intermediate read-out for deep submicron technology CMOS image sensors. In: IEEE Sensors Journal. 2008 ; Vol. 8, No. 3. pp. 286-294.
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