Robust intermediate read-out for deep submicron technology CMOS image sensors

Chen Shoushun, Farid Boussaid, Amine Bermak

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

In this paper, a CMOS image sensor featuring a novel spiking pixel design and a robust digital intermediate read-out is proposed for deep submicron CMOS technologies. The proposed read-out scheme exhibits a relative insensitivity to the ongoing aggressive scaling of the supply voltage. It is based on a novel compact spiking pixel circuit, which combines digitizing and memory functions. Illumination is encoded into a Gray code using a very simple yet robust Gray 8-bit counter memory. Circuit simulations and experiments demonstrate the successful operation of a 64 × 64 image sensor, implemented in a 0.35 μm CMOS technology. A scalability analysis is presented. It suggests that deep sub-0.18 μm will enable the full potential of the proposed Gray encoding spiking pixel. Potential applications include multiresolution imaging and motion detection.

Original languageEnglish
Article number912783
Pages (from-to)286-294
Number of pages9
JournalIEEE Sensors Journal
Volume8
Issue number3
DOIs
Publication statusPublished - Mar 2008
Externally publishedYes

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Keywords

  • Cmos image sensor
  • Intermediate read-out
  • Scalability
  • Spiking pixel

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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