Residual strain and texture in strontium-doped lanthanum manganite thin films

L. Meda, C. Bacaltchuk, H. Garmestani, K. H. Dahmen

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Thin films of La0.67Sr0.33MnO3 (LSMO) have been deposited using liquid-delivery metal-organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) 2θ/θ scans showed that all the films has a cubic structure. Studies of the in-plane crystallographic orientations (pole figure) revealed an (001) preferred growth structure on LAO, a weak (110) texture on Y-ZrO2 (YSZ), a random texture on sapphire (SAP) and silicon (Si). Our attention is focused on residual strain and its deviations from linearity for εφ,Ψ vs. sin2Ψ plots. The strain evolution from 0 < sin2Ψ < 0.8 showed a curvature and a "snake-like" pattern. These anomalies are attributed to texture and strain gradients. In-plane strain decreased as the lattice mismatch increased and varied from 0.05 to 3.03% depending on the substrate. An attempt is made to establish a relationship between lattice mismatch, growth process, and residual strain.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume12
Issue number3
DOIs
Publication statusPublished - 1 Mar 2001
Externally publishedYes

Fingerprint

Lanthanum
Strontium
lanthanum
strontium
textures
Textures
Thin films
thin films
Lattice mismatch
snakes
plane strain
yttria-stabilized zirconia
linearity
metalorganic chemical vapor deposition
delivery
sapphire
Organic Chemicals
poles
plots
curvature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Residual strain and texture in strontium-doped lanthanum manganite thin films. / Meda, L.; Bacaltchuk, C.; Garmestani, H.; Dahmen, K. H.

In: Journal of Materials Science: Materials in Electronics, Vol. 12, No. 3, 01.03.2001, p. 143-146.

Research output: Contribution to journalArticle

Meda, L. ; Bacaltchuk, C. ; Garmestani, H. ; Dahmen, K. H. / Residual strain and texture in strontium-doped lanthanum manganite thin films. In: Journal of Materials Science: Materials in Electronics. 2001 ; Vol. 12, No. 3. pp. 143-146.
@article{e8d7c22557404f769378c4417a03d9c1,
title = "Residual strain and texture in strontium-doped lanthanum manganite thin films",
abstract = "Thin films of La0.67Sr0.33MnO3 (LSMO) have been deposited using liquid-delivery metal-organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) 2θ/θ scans showed that all the films has a cubic structure. Studies of the in-plane crystallographic orientations (pole figure) revealed an (001) preferred growth structure on LAO, a weak (110) texture on Y-ZrO2 (YSZ), a random texture on sapphire (SAP) and silicon (Si). Our attention is focused on residual strain and its deviations from linearity for εφ,Ψ vs. sin2Ψ plots. The strain evolution from 0 < sin2Ψ < 0.8 showed a curvature and a {"}snake-like{"} pattern. These anomalies are attributed to texture and strain gradients. In-plane strain decreased as the lattice mismatch increased and varied from 0.05 to 3.03{\%} depending on the substrate. An attempt is made to establish a relationship between lattice mismatch, growth process, and residual strain.",
author = "L. Meda and C. Bacaltchuk and H. Garmestani and Dahmen, {K. H.}",
year = "2001",
month = "3",
day = "1",
doi = "10.1023/A:1011224630332",
language = "English",
volume = "12",
pages = "143--146",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "3",

}

TY - JOUR

T1 - Residual strain and texture in strontium-doped lanthanum manganite thin films

AU - Meda, L.

AU - Bacaltchuk, C.

AU - Garmestani, H.

AU - Dahmen, K. H.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - Thin films of La0.67Sr0.33MnO3 (LSMO) have been deposited using liquid-delivery metal-organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) 2θ/θ scans showed that all the films has a cubic structure. Studies of the in-plane crystallographic orientations (pole figure) revealed an (001) preferred growth structure on LAO, a weak (110) texture on Y-ZrO2 (YSZ), a random texture on sapphire (SAP) and silicon (Si). Our attention is focused on residual strain and its deviations from linearity for εφ,Ψ vs. sin2Ψ plots. The strain evolution from 0 < sin2Ψ < 0.8 showed a curvature and a "snake-like" pattern. These anomalies are attributed to texture and strain gradients. In-plane strain decreased as the lattice mismatch increased and varied from 0.05 to 3.03% depending on the substrate. An attempt is made to establish a relationship between lattice mismatch, growth process, and residual strain.

AB - Thin films of La0.67Sr0.33MnO3 (LSMO) have been deposited using liquid-delivery metal-organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) 2θ/θ scans showed that all the films has a cubic structure. Studies of the in-plane crystallographic orientations (pole figure) revealed an (001) preferred growth structure on LAO, a weak (110) texture on Y-ZrO2 (YSZ), a random texture on sapphire (SAP) and silicon (Si). Our attention is focused on residual strain and its deviations from linearity for εφ,Ψ vs. sin2Ψ plots. The strain evolution from 0 < sin2Ψ < 0.8 showed a curvature and a "snake-like" pattern. These anomalies are attributed to texture and strain gradients. In-plane strain decreased as the lattice mismatch increased and varied from 0.05 to 3.03% depending on the substrate. An attempt is made to establish a relationship between lattice mismatch, growth process, and residual strain.

UR - http://www.scopus.com/inward/record.url?scp=0035266326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035266326&partnerID=8YFLogxK

U2 - 10.1023/A:1011224630332

DO - 10.1023/A:1011224630332

M3 - Article

VL - 12

SP - 143

EP - 146

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 3

ER -