Residual strain and texture in strontium-doped lanthanum manganite thin films

L. Meda, C. Bacaltchuk, H. Garmestani, K. H. Dahmen

Research output: Contribution to journalArticle

15 Citations (Scopus)


Thin films of La0.67Sr0.33MnO3 (LSMO) have been deposited using liquid-delivery metal-organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) 2θ/θ scans showed that all the films has a cubic structure. Studies of the in-plane crystallographic orientations (pole figure) revealed an (001) preferred growth structure on LAO, a weak (110) texture on Y-ZrO2 (YSZ), a random texture on sapphire (SAP) and silicon (Si). Our attention is focused on residual strain and its deviations from linearity for εφ,Ψ vs. sin2Ψ plots. The strain evolution from 0 < sin2Ψ < 0.8 showed a curvature and a "snake-like" pattern. These anomalies are attributed to texture and strain gradients. In-plane strain decreased as the lattice mismatch increased and varied from 0.05 to 3.03% depending on the substrate. An attempt is made to establish a relationship between lattice mismatch, growth process, and residual strain.

Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Issue number3
Publication statusPublished - 1 Mar 2001
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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